Fontcuberta i Morral, A. and Zahler, J. M. and Griggs, M. J. and Atwater, Harry A. and Chabal, Y. J. (2005) Spectroscopic studies of the mechanism for hydrogen-induced exfoliation of InP. Physical Review B, 72 (8). Art. no. 085219. ISSN 1098-0121. http://resolver.caltech.edu/CaltechAUTHORS:MORprb05
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The motion and bonding configurations of hydrogen in InP are studied after proton implantation and subsequent annealing, using Fourier transform infrared (FTIR) spectroscopy. It is demonstrated that, as implanted, hydrogen is distributed predominantly in isolated pointlike configurations with a smaller concentration of extended defects with uncompensated dangling bonds. During annealing, the bonded hydrogen is released from point defects and is recaptured at the peak of the distribution by free internal surfaces in di-hydride configurations. At higher temperatures, immediately preceding exfoliation, rearrangement processes lead to the formation of hydrogen clusters and molecules. Reported results demonstrate that the exfoliation dynamics of hydrogen in InP and Si are markedly different, due to the higher mobility of hydrogen in InP and different implant-defect characteristics, leading to fundamental differences in the chemical mechanism for exfoliation.
|Additional Information:||©2005 The American Physical Society (Received 4 March 2005; revised 27 May 2005; published 24 August 2005)|
|Subject Keywords:||indium compounds; hydrogen; III-V semiconductors; ion implantation; semiconductor doping; annealing; Fourier transform spectra; infrared spectra; point defects; dangling bonds; molecular clusters|
|Usage Policy:||No commercial reproduction, distribution, display or performance rights in this work are provided.|
|Deposited By:||Archive Administrator|
|Deposited On:||18 Feb 2006|
|Last Modified:||26 Dec 2012 08:46|
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