Hwang, Gyeong S. and Giapis, Konstantinos P. (1999) Role of film conformality in charging damage during plasma-assisted interlevel dielectric deposition. Journal of Vacuum Science and Technology B, 17 (3). pp. 999-1002. ISSN 1071-1023. http://resolver.caltech.edu/CaltechAUTHORS:HWAjvstb99
See Usage Policy.
Use this Persistent URL to link to this item: http://resolver.caltech.edu/CaltechAUTHORS:HWAjvstb99
While observations of charging damage during plasma-assisted deposition have been erratic thus far, concern abounds that it may worsen as aspect ratios increase and high-density plasmas are used more frequently. Simulations of pattern-dependent charging during interlevel dielectric deposition reveal that the initial conformality of the dielectric film plays a crucial role in metal line charge up and the subsequent degradation to the buried gate oxide, to which the metal line is connected. For moderate aspect ratios, significant charging damage occurs for nonconformal step coverage.
|Additional Information:||©1999 American Vacuum Society. (Received 29 October 1998; accepted 29 January 1999) This material was based on work supported by an NSF Career Award and a Camille Dreyfus Teacher-Scholar Award to K.P.G. An Applied Materials scholarship in partial support of G.S.H. is gratefully acknowledged.|
|Subject Keywords:||dielectric thin films; metallisation; conformal coatings; plasma deposition; semiconductor process modelling|
|Usage Policy:||No commercial reproduction, distribution, display or performance rights in this work are provided.|
|Deposited By:||Archive Administrator|
|Deposited On:||21 Feb 2006|
|Last Modified:||26 Dec 2012 08:46|
Repository Staff Only: item control page