Hwang, Gyeong S. and Giapis, Konstantinos P. (1997) Electron irradiance of conductive sidewalls: A determining factor for pattern-dependent charging. Journal of Vacuum Science and Technology B, 15 (5). pp. 1741-1746. ISSN 1071-1023 http://resolver.caltech.edu/CaltechAUTHORS:HWAjvstb97b
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Numerical simulations of charging and profile evolution during gate electrode overetching in high density plasmas have been performed to investigate the effect of long conductive sidewalls on profile distortion (notching). The results reveal that the angle of electron irradiance of the conductive portion of the sidewalls affects profoundly the charging potential of the gates. Larger angles, obtained for thinner masks and/or thicker polysilicon, result in reduced gate potentials which, through their influence on the local ion dynamics, cause more severe notching at all lines of the microstructure.
|Additional Information:||©1997 American Vacuum Society. (Received 7 March 1997; accepted 7 July 1997) This work was partially supported by a NSF Career Award to K.P.G. (CTS-9623450).|
|Subject Keywords:||sputter etching; electron beam effects; surface charging; semiconductor process modelling|
|Usage Policy:||No commercial reproduction, distribution, display or performance rights in this work are provided.|
|Deposited By:||Archive Administrator|
|Deposited On:||21 Feb 2006|
|Last Modified:||26 Dec 2012 08:46|
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