Hwang, Gyeong S. and Giapis, Konstantinos P. (1997) On the link between electron shadowing and charging damage. Journal of Vacuum Science and Technology B, 15 (5). pp. 1839-1842. ISSN 1071-1023 http://resolver.caltech.edu/CaltechAUTHORS:HWAjvstb97a
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Charging and topography evolution simulations during plasma etching of high aspect ratio line-and-space patterns reveal that electron shadowing of the sidewalls critically affects charging damage. Decreasing the degree of electron shadowing by using thinner masks decreases the potentials of the etched features with a concomitant reduction in Fowler–Nordheim tunneling currents through underlying thin gate oxides. Simultaneously, the potential distribution in the trench changes, significantly perturbing the local ion dynamics which, in turn, cause the notching effect to worsen. Since the latter can be reduced independently by selecting an appropriate etch chemistry, the use of thinner (hard) masks is predicted to be advantageous for the prevention of gate oxide failure.
|Additional Information:||©1997 American Vacuum Society. (Received 17 January 1997; accepted 6 June 1997)|
|Subject Keywords:||sputter etching; semiconductor process modelling; tunnelling; surface charging; masks|
|Usage Policy:||No commercial reproduction, distribution, display or performance rights in this work are provided.|
|Deposited By:||Archive Administrator|
|Deposited On:||21 Feb 2006|
|Last Modified:||26 Dec 2012 08:46|
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