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Application of selective epitaxy to fabrication of nanometer scale wire and dot structures

Lebens, John A. and Tsai, Charles S. and Vahala, Kerry J. and Kuech, T. F. (1990) Application of selective epitaxy to fabrication of nanometer scale wire and dot structures. Applied Physics Letters, 56 (26). pp. 2642-2644. ISSN 0003-6951. http://resolver.caltech.edu/CaltechAUTHORS:LEBapl90

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Abstract

The selective growth of nanometer scale GaAs wire and dot structures using metalorganic vapor phase epitaxy is demonstrated. Spectrally resolved cathodoluminescence images as well as spectra from single dots and wires are presented. A blue shifting of the GaAs peak is observed as the size scale of the wires and dots decreases.


Item Type:Article
Additional Information:Copyright © 1990 American Institute of Physics. Received 12 February 1990; accepted 13 April 1990. The authors would like to acknowledge J. Kazovitz for the dielectric mask deposition. This work was supported by the Office of Naval Research and the National Science Foundation. One of us (C. T.) would like to acknowledge the support of a graduate National Science Foundation fellowship.
Subject Keywords:FABRICATION; GALLIUM ARSENIDES; VAPOR PHASE EPITAXY; ORGANOMETALLIC COMPOUNDS; MICROELECTRONICS; WIRES
Record Number:CaltechAUTHORS:LEBapl90
Persistent URL:http://resolver.caltech.edu/CaltechAUTHORS:LEBapl90
Alternative URL:http://dx.doi.org/10.1063/1.102862
Usage Policy:No commercial reproduction, distribution, display or performance rights in this work are provided.
ID Code:1874
Collection:CaltechAUTHORS
Deposited By: Tony Diaz
Deposited On:22 Feb 2006
Last Modified:26 Dec 2012 08:46

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