Lebens, John A. and Tsai, Charles S. and Vahala, Kerry J. and Kuech, T. F. (1990) Application of selective epitaxy to fabrication of nanometer scale wire and dot structures. Applied Physics Letters, 56 (26). pp. 2642-2644. ISSN 0003-6951. http://resolver.caltech.edu/CaltechAUTHORS:LEBapl90
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The selective growth of nanometer scale GaAs wire and dot structures using metalorganic vapor phase epitaxy is demonstrated. Spectrally resolved cathodoluminescence images as well as spectra from single dots and wires are presented. A blue shifting of the GaAs peak is observed as the size scale of the wires and dots decreases.
|Additional Information:||Copyright © 1990 American Institute of Physics. Received 12 February 1990; accepted 13 April 1990. The authors would like to acknowledge J. Kazovitz for the dielectric mask deposition. This work was supported by the Office of Naval Research and the National Science Foundation. One of us (C. T.) would like to acknowledge the support of a graduate National Science Foundation fellowship.|
|Subject Keywords:||FABRICATION; GALLIUM ARSENIDES; VAPOR PHASE EPITAXY; ORGANOMETALLIC COMPOUNDS; MICROELECTRONICS; WIRES|
|Usage Policy:||No commercial reproduction, distribution, display or performance rights in this work are provided.|
|Deposited By:||Tony Diaz|
|Deposited On:||22 Feb 2006|
|Last Modified:||11 Jun 2015 16:35|
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