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Solid phase recrystallization of ZnS thin films on sapphire

Bandić, Z. Z. and Piquette, E. C. and McCaldin, J. O. and McGill, T. C. (1998) Solid phase recrystallization of ZnS thin films on sapphire. Applied Physics Letters, 72 (22). pp. 2862-2864. ISSN 0003-6951. http://resolver.caltech.edu/CaltechAUTHORS:BANapl98

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Abstract

High quality ZnS thin films are important for light emitting diodes based on ZnS, which is a very efficient phosphor. To improve as grown, molecular beam epitaxial, (111)-oriented cubic ZnS films, where defects were introduced due to the large mismatch between ZnS and a sapphire substrate (~ 20%), the ZnS was recrystallized by annealing at temperatures in the 825–1000 °C range, and sulfur pressures of 10 atm. The films have been structurally characterized by high-resolution x-ray diffraction, and electron diffraction by electron channeling patterns. Structural properties of the films annealed at temperatures above 900° have improved significantly. Tilting in the recrystallized films has been reduced more than tenfold, with the recrystallized grains being defect-free. Most films were recrystallized in the as-grown, cubic form, as shown by electron channeling patterns. The surfaces of the films have been inspected with scanning electron microscope, and on most samples they have been found to remain smooth, although on some of the films annealed at elevated temperatures we have observed hexagonal pits. The role of sulfur gas overpressure in the recrystallization has been discussed, and possible effects on film evaporation, grain boundary migration and compliancy of sapphire substrate have been analyzed.


Item Type:Article
Additional Information:©1998 American Institute of Physics. (Received 17 November 1997; accepted 29 March 1998) One of the authors (Z.Z.B.) is indebted to Professor W. L. Johnson for helpful discussions. This work was supported by the Advanced Research Project Agency, and monitored by the Office of Naval Research under Grant No. N00014-92-J-1845.
Subject Keywords:zinc compounds; II-VI semiconductors; semiconductor thin films; semiconductor epitaxial layers; recrystallisation; recrystallisation annealing; electron diffraction; channelling; grain boundary diffusion; scanning electron microscopy; phosphors
Record Number:CaltechAUTHORS:BANapl98
Persistent URL:http://resolver.caltech.edu/CaltechAUTHORS:BANapl98
Alternative URL:http://dx.doi.org/10.1063/1.121483
Usage Policy:No commercial reproduction, distribution, display or performance rights in this work are provided.
ID Code:1894
Collection:CaltechAUTHORS
Deposited By: Archive Administrator
Deposited On:22 Feb 2006
Last Modified:26 Dec 2012 08:46

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