Grimaldi, M. G. and Paine, B. M. and Mäenpää, M. and Nicolet, M.-A. and Sadana, D. K. (1981) Epitaxial regrowth of thin amorphous GaAs layers. Applied Physics Letters, 39 (1). pp. 70-72. ISSN 0003-6951. http://resolver.caltech.edu/CaltechAUTHORS:GRIapl81
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Channeling and transmission electron microscopy have been used to investigate the parameters that govern the crystal quality following capless funace annealing at low temperature (~ 400 °C) in ion-implanted GaAs. From the results obtained, we concluded that the crystal quality after annealing depends strongly on the thickness of the amorphous layer generated by ion implantation and the number of residual defects increases linearly with the thickness of the implanted layer. Single-crystal regrowth free of defects detectable by megaelectron volt He + channeling was achieved for a very thin amorphous layer (<~ 400 Å).
|Additional Information:||Copyright © 1981 American Institute of Physics. This work was supported in part by the Advanced Research Projects Agency of the Department of Defense and was monitored by the Air Force Office of Scientific Research under Contract No. F-49620-77-C-0087. Financial support was also received from the Basic Research Division of the Department of Energy through the Materials and Molecular Research Division of the Lawrence Berkeley Laboratory.|
|Subject Keywords:||GALLIUM ARSENIDES; AMORPHOUS STATE; LAYERS; EPITAXY; RECRYSTALLIZATION; ION CHANNELING; TRANSMISSION ELECTRON MICROSCOPY; HIGH TEMPERATURE; FURNACES; ANNEALING; ION IMPLANTATION; THICKNESS; CRYSTAL DEFECTS; SPATIAL DEPENDENCE; MONOCRYSTALS; HELIUM IONS; MEV RANGE|
|Usage Policy:||No commercial reproduction, distribution, display or performance rights in this work are provided.|
|Deposited By:||Tony Diaz|
|Deposited On:||25 Feb 2006|
|Last Modified:||26 Dec 2012 08:46|
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