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Orientation selection by zone-melting silicon films through planar constrictions

Atwater, H. A. and Smith, Henry I. and Geis, M. W. (1982) Orientation selection by zone-melting silicon films through planar constrictions. Applied Physics Letters, 41 (8). pp. 747-749. ISSN 0003-6951. http://resolver.caltech.edu/CaltechAUTHORS:ATWapl82

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Abstract

Recrystallization of encapsulated Si films on SiO2 by zone-melting produces films composed of several grains approximately 1 mm wide and extending the length of the scan. Within grains there are sub-boundaries. We report a technique for producing recrystallized Si films of a single orientation. The technique consists of patterning polysilicon with a narrow, planar constriction and passing a molten zone through it so that only one orientation propagates beyond the constriction. We also show that sub-boundaries can be eliminated in the constriction.


Item Type:Article
Additional Information:Copyright © 1982 American Institute of Physics. Received 16 July 1982; accepted for publication 6 August 1982. This work was sponsored by the Department of Energy and the Defense Advanced Research Projects Agency. The authors are grateful to R. W. Mountain who provided the substrates, and to J. M. Carter, C. L. Doherty, and J. L. Vigilante, and S. Gatley for technical assistance.
Subject Keywords:FILMS; SILICON; ZONE MELTING; ORIENTATION; RECRYSTALLIZATION; EXPERIMENTAL DATA; SILICON OXIDES; GRAIN SIZE; GRAIN BOUNDARIES; POLYCRYSTALS
Record Number:CaltechAUTHORS:ATWapl82
Persistent URL:http://resolver.caltech.edu/CaltechAUTHORS:ATWapl82
Alternative URL:http://dx.doi.org/10.1063/1.93664
Usage Policy:No commercial reproduction, distribution, display or performance rights in this work are provided.
ID Code:1929
Collection:CaltechAUTHORS
Deposited By: Tony Diaz
Deposited On:23 Feb 2006
Last Modified:26 Dec 2012 08:46

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