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Silicon optical nanocrystal memory

Walters, R. J. and Kik, P. G. and Casperson, J. D. and Atwater, H. A. and Lindstedt, R. and Giorgi, M. and Bourianoff, G. (2004) Silicon optical nanocrystal memory. Applied Physics Letters, 85 (13). pp. 2622-2624. ISSN 0003-6951.

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We describe the operation of a silicon optical nanocrystal memory device. The programmed logic state of the device is read optically by the detection of high or low photoluminescence intensity. The suppression of excitonic photoluminescence is attributed to the onset of fast nonradiative Auger recombination in the presence of an excess charge carrier. The device can be programmed and erased electrically via charge injection and optically via internal photoemission. Photoluminescence suppression of up to 80% is demonstrated with data retention times of up to several minutes at room temperature.

Item Type:Article
Additional Information:Copyright © 2004 American Institute of Physics. Received 19 January 2004; accepted 22 July 2004. This work was supported by Intel Corporation and NASA. One of the authors (R.J.W.) gratefully acknowledges NDSEG Fellowship support through the Army Research Office.
Subject Keywords:silicon; elemental semiconductors; nanostructured materials; semiconductor storage; Auger effect; photoemission; charge injection; photoluminescence; optical storage
Record Number:CaltechAUTHORS:WALapl04
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Usage Policy:No commercial reproduction, distribution, display or performance rights in this work are provided.
ID Code:1936
Deposited By: Tony Diaz
Deposited On:24 Feb 2006
Last Modified:26 Dec 2012 08:46

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