Vahala, Kerry J. and Newkirk, Michael A. and Chen, T. R. (1989) The optical gain lever: A novel gain mechanism in the direct modulation of quantum well semiconductor lasers. Applied Physics Letters, 54 (25). pp. 2506-2508. ISSN 0003-6951. http://resolver.caltech.edu/CaltechAUTHORS:VAHapl89
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A new gain mechanism active in certain quantum well laser diode structures is demonstrated and explained theoretically. It enhances the modulation amplitude produced by either optical or electrical modulation of quantum well structures. In the devices tested, power gains of 6 dB were measured from low frequency to frequencies of several gigahertz. Higher gains may be possible in optimized structures.
|Additional Information:||Copyright © 1989 American Institute of Physics. Received 20 March 1989; accepted 17 April 1989. The authors are grateful for molecular beam epitaxy material supplied by Professor Amnon Yariv. This work was supported by the National Science Foundation and by the Caltech Program in Advance Technologies supported by TRW, Aerojet, and General Motors. One author (M. A. N.) is supported by an IBM graduate fellowship.|
|Subject Keywords:||GAIN; SEMICONDUCTOR LASERS; THEORETICAL DATA; MODULATION; EXPERIMENTAL DATA; ALUMINIUM ARSENIDES; GALLIUM ARSENIDES; MOLECULAR BEAM EPITAXY; OPERATION|
|Usage Policy:||No commercial reproduction, distribution, display or performance rights in this work are provided.|
|Deposited By:||Tony Diaz|
|Deposited On:||24 Feb 2006|
|Last Modified:||26 Dec 2012 08:46|
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