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Parasitic-free measurement of the fundamental frequency response of a semiconductor laser by active-layer photomixing

Newkirk, Michael A. and Vahala, Kerry J. (1988) Parasitic-free measurement of the fundamental frequency response of a semiconductor laser by active-layer photomixing. Applied Physics Letters, 52 (10). pp. 770-772. ISSN 0003-6951. http://resolver.caltech.edu/CaltechAUTHORS:NEWapl88

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Abstract

We report the measurement of the fundamental (intrinsic) frequency response of a GaAs semiconductor laser to 12 GHz by directly photomixing two optical sources in the active region of the laser. This novel technique reveals the underlying fundamental frequency response of the device as parasitic effects are avoided. Well beyond the relaxation resonance, the theoretically predicted 40 dB/dec signal rolloff is observed. Other features of the measured response function are also observed to be the theoretical ideal.


Item Type:Article
Additional Information:Copyright © 1988 American Institute of Physics. Received 7 December 1987; accepted 4 January 1988. This work was supported by the National Science Foundation, the Powell Foundation, and AT&T Bell Laboratories. The authors are grateful for stimulating conversations with Joel Paslaski.
Subject Keywords:GALLIUM ARSENIDES; SEMICONDUCTOR LASERS; MIXING; FREQUENCY CONTROL; FREQUENCY MIXING; SPECTRAL RESPONSE; RELAXATION; EXPERIMENTAL DATA
Record Number:CaltechAUTHORS:NEWapl88
Persistent URL:http://resolver.caltech.edu/CaltechAUTHORS:NEWapl88
Alternative URL:http://dx.doi.org/10.1063/1.99278
Usage Policy:No commercial reproduction, distribution, display or performance rights in this work are provided.
ID Code:1958
Collection:CaltechAUTHORS
Deposited By: Tony Diaz
Deposited On:27 Feb 2006
Last Modified:26 Dec 2012 08:46

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