Wong, Joyce and Scherer, Axel and Todorovic, Mladen and Schultz, Sheldon (1999) Fabrication and characterization of high aspect ratio perpendicular patterned information storage media in an Al2O3/GaAs substrate. Journal of Applied Physics, 85 (8). pp. 5489-5491. ISSN 0021-8979 http://resolver.caltech.edu/CaltechAUTHORS:WONjap99
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In a new approach, we have fabricated 6:1 aspect ratio magnetic nanocolumns, 60–250 nm in diameter, embedded in a hard aluminum-oxide/gallium-arsenide (Al2O3/GaAs) substrate. The fabrication technique uses the highly selective etching properties of GaAs and AlAs, and highly efficient masking properties of Al2O3 to create small diameter, high aspect ratio holes. Nickel (Ni) is subsequently electroplated into the holes, followed by polishing, which creates a smooth and hard surface appropriate for future reading and writing of the columns as individual bits for high density information storage. We have used magnetic force microscopy and scanning magneto-resistance microscopy to characterize the resulting magnets. We find the columns more magnetically stable than previously achieved with magnets embedded in a SiO2 substrate. Such stability is necessary before further writing of perpendicular patterned media can be demonstrated.
|Additional Information:||©1999 American Institute of Physics. The authors gratefully acknowledge C. C. Cheng and O. J. Painter for many helpful discussions. They thank F. Spada, R. O’Barr, S. Y. Yamamoto, M. Re, and V. Prabhakaran for helpful suggestions, J. F. Smyth for providing them with the MR heads, and R. K. Lee for the growth of the MBE wafers. This work was funded by the National Science Foundation and the Army Research Office.|
|Subject Keywords:||nickel; perpendicular magnetic recording; magnetic particles; ferromagnetic materials; electron beam lithography; sputter etching; electroplating; polishing; magnetic force microscopy; magnetoresistance; coercive force; nanotechnology|
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|Deposited By:||Archive Administrator|
|Deposited On:||27 Feb 2006|
|Last Modified:||26 Dec 2012 08:46|
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