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Solar furnace annealing of amorphous Si layers

Lau, S. S. and von Allmen, M. and Golecki, I. and Nicolet, M.-A. and Kennedy, E. F. and Tseng, W. F. (1979) Solar furnace annealing of amorphous Si layers. Applied Physics Letters, 35 (4). pp. 327-329. ISSN 0003-6951. http://resolver.caltech.edu/CaltechAUTHORS:LAUapl79

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Abstract

We demonstrate that a simple Al solar reflector can be used to induce solid-phase epitaxy of amorphous Si layers obtained either by ion-implantation or ion-deposition techniques. The annealing can be accomplished in air and takes a few seconds for a 1-cm^2 sample area. For ion-implanted samples, the regrown layers are defect free on <100> substrates, and contain microtwins on <111> substrates. For deposited layers on <100> substrates the degree of epitaxy is not as good as that obtained by furnace annealing (550 followed by 950°C annealing).


Item Type:Article
Additional Information:Copyright © 1979 American Institute of Physics. Received 9 April 1979; accepted for publication 25 May 1979. The financial support of the Office of Naval Research (L. Cooper) is gratefully acknowledged. One of the authors (M. von Allmen) thanks the Swiss Nationalfonds for financial support.
Subject Keywords:SOLAR FURNACES; LAYERS; AMORPHOUS STATE; ANNEALING; SILICON; ALUMINIUM; REFLECTION; EPITAXY; ION IMPLANTATION; DEPOSITION; CRYSTAL DEFECTS; SUBSTRATE
Record Number:CaltechAUTHORS:LAUapl79
Persistent URL:http://resolver.caltech.edu/CaltechAUTHORS:LAUapl79
Alternative URL:http://dx.doi.org/10.1063/1.91109
Usage Policy:No commercial reproduction, distribution, display or performance rights in this work are provided.
ID Code:1984
Collection:CaltechAUTHORS
Deposited By: Tony Diaz
Deposited On:28 Feb 2006
Last Modified:26 Dec 2012 08:47

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