CaltechAUTHORS
  A Caltech Library Service

Microscopic processes during electron cyclotron resonance microwave nitrogen plasma-assisted molecular beam epitaxial growth of GaN/GaAs heterostructures: Experiments and kinetic modeling

Bandić, Z. Z. and McGill, T. C. and Hauenstein, R. J. and O'Steen, M. L. (1996) Microscopic processes during electron cyclotron resonance microwave nitrogen plasma-assisted molecular beam epitaxial growth of GaN/GaAs heterostructures: Experiments and kinetic modeling. Journal of Vacuum Science and Technology B, 14 (4). pp. 2948-2951. ISSN 1071-1023. http://resolver.caltech.edu/CaltechAUTHORS:BANjvstb96

[img]
Preview
PDF
See Usage Policy.

96Kb

Use this Persistent URL to link to this item: http://resolver.caltech.edu/CaltechAUTHORS:BANjvstb96

Abstract

A set of delta-GaNyAs1–y/GaAs strained-layer superlattices grown on GaAs (001) substrates by electron cyclotron resonance (ECR) microwave plasma-assisted molecular beam epitaxy (MBE) was characterized by ex situ high resolution X-ray diffraction (HRXRD) to determine nitrogen content y in the nitrided GaAs monolayers as a function of growth temperature T. A first order kinetic model is introduced to quantitatively explain this y(T) dependence in terms of an energetically favorable N for As anion exchange and thermally activated N-surface desorption and surface segregation processes. The nitrogen surface segregation process, with an estimated activation energy Es ~ 0.9 eV appears to be significant during the GaAs overgrowth of GaNyAs1–y layers, and is shown to be responsible for strong y(T) dependence.


Item Type:Article
Additional Information:©1996 American Vacuum Society (Received 22 January 1996; accepted 16 April 1996) This work was supported by Advanced Research Project Agency, and monitored by Office of Naval Research under Grant No. N00014-92-J-1845. Additionally, two of us (R.J.H. and M.L.O.) wish to acknowledge the support of Air Force Office of Scientific Research under Contract Nos. F49620-93-1-0211 and F49620-93-1-0389, and the support of the Advanced Research Projects Agency, monitored through the Army Research Office under Contract No. DAAH04-94-G-0393.
Subject Keywords:SUPERLATTICES; GALLIUM NITRIDES; GALLIUM ARSENIDES; MOLECULAR BEAM EPITAXY; HIGH – FREQUENCY DISCHARGES; DESORPTION; ACTIVATION ENERGY; TEMPERATURE DEPENDENCE; KINETIC EQUATIONS; MATHEMATICAL MODELS; SURFACE REACTIONS; TEMPERATURE RANGE 400 – 1000 K
Record Number:CaltechAUTHORS:BANjvstb96
Persistent URL:http://resolver.caltech.edu/CaltechAUTHORS:BANjvstb96
Alternative URL:http://dx.doi.org/10.1116/1.588940
Usage Policy:No commercial reproduction, distribution, display or performance rights in this work are provided.
ID Code:1993
Collection:CaltechAUTHORS
Deposited By: Archive Administrator
Deposited On:28 Feb 2006
Last Modified:26 Dec 2012 08:47

Repository Staff Only: item control page