Bai, G. and Nicolet, M.-A. (1992) Generation and recovery of strain in (28)Si-implanted pseudomorphic GeSi films on Si(100). Journal of Applied Physics, 71 (9). pp. 4227-4229. ISSN 0021-8979. http://resolver.caltech.edu/CaltechAUTHORS:BAIjap92b
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Effects of ion implantation of 320 keV Si-28 at room temperature in pseudomorphic metastable GexSi1-x (x almost-equal-to 0.04, 0.09, 0.13) layers approximately 170 nm thick grown on Si(100) wafers were characterized by x-ray double-crystal diffractometry and MeV He-4 channeling spectrometry. The damage induced by implantation produces additional compressive strain in the GexSi1-x layers, superimposed on the intrinsic compressive strain of the heterostructures. This strain rises with the dose proportionally for doses below several times 10(14) Si-28/cm2. Furthermore, for a given dose, the strain increases with the Ge content in the layer. Upon thermal processing, the damage anneals out and the strain recovers to the value before implantation. Amorphized samples (doses of greater than 2 x 10(15) Si-28/cm2) regrow poorly.
|Additional Information:||Copyright © 1992 American Institute of Physics. Received 28 October 1991; accepted 29 January 1992. We would like to thank Dr. Akbar at IBM for providing the as-grown GeSi/Si(100) samples. This paper is based upon the work supported in part by the Semiconductor Research Corporation under contract No. 91-SJ-100.|
|Subject Keywords:||GERMANIUM SILICIDES; STRAINS; ION IMPLANTATION; SILICON IONS; THIN FILMS; DAMAGE; ANNEALING; AMORPHIZATION; KEV RANGE 100–1000|
|Usage Policy:||No commercial reproduction, distribution, display or performance rights in this work are provided.|
|Deposited By:||Tony Diaz|
|Deposited On:||06 Mar 2006|
|Last Modified:||26 Dec 2012 08:47|
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