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Schottky-based band lineups for refractory semiconductors

Wang, M. W. and McCaldin, J. O. and Swenberg, J. F. and McGill, T. C. and Hauenstein, R. J. (1995) Schottky-based band lineups for refractory semiconductors. Applied Physics Letters, 66 (15). pp. 1974-1976. ISSN 0003-6951. http://resolver.caltech.edu/CaltechAUTHORS:WANapl95

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Abstract

An overview is presented of band alignments for small-lattice parameter, refractory semiconductors. The band alignments are estimated empirically through the use of available Schottky barrier height data, and are compared to theoretically predicted values. Results for tetrahedrally bonded semiconductors with lattice constant values in the range from C through ZnSe are presented. Based on the estimated band alignments and the recently demonstrated p-type dopability of GaN, we propose three novel heterojunction schemes which seek to address inherent difficulties in doping or electrical contact to wide-gap semiconductors such as ZnO, ZnSe, and ZnS.


Item Type:Article
Additional Information:Copyright © 1995 American Institute of Physics. Received 5 December 1994; accepted 26 January 1995. This work was supported by the Advanced Research Projects Agency monitored under ONR Contract N00014-92-J-1845.
Subject Keywords:ZINC OXIDES; ZINC SELENIDES; ZINC SULFIDES; GALLIUM NITRIDES; SCHOTTKY BARRIER DIODES; BARRIER HEIGHT; BAND STRUCTURE; INTERFACE STATES; ALIGNMENT; METAL–SEMICONDUCTOR CONTACTS; CRYSTAL DOPING
Record Number:CaltechAUTHORS:WANapl95
Persistent URL:http://resolver.caltech.edu/CaltechAUTHORS:WANapl95
Alternative URL:http://dx.doi.org/10.1063/1.113295
Usage Policy:No commercial reproduction, distribution, display or performance rights in this work are provided.
ID Code:2070
Collection:CaltechAUTHORS
Deposited By: Tony Diaz
Deposited On:06 Mar 2006
Last Modified:26 Dec 2012 08:47

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