Wang, M. W. and Swenberg, J. F. and Phillips, M. C. and Yu, E. T. and McCaldin, J. O. and Grant, R. W. and McGill, T. C. (1994) X-ray photoelectron spectroscopy measurement of valence-band offsets for Mg-based semiconductor compounds. Applied Physics Letters, 64 (25). pp. 3455-3457. ISSN 0003-6951 http://resolver.caltech.edu/CaltechAUTHORS:WANapl94
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Abstract
We have used x-ray photoelectron spectroscopy to measure the valence-band offsets for the lattice matched MgSe/Cd0.54Zn0.46Se and MgTe/Cd0.88Zn0.12Te heterojunctions grown by molecular beam epitaxy. By measuring core level to valence-band maxima and core level to core level binding energy separations, we obtain values of 0.56+/-0.07 eV and 0.43+/-0.11 eV for the valence-band offsets of MgSe/Cd0.54Zn0.46Se and MgTe/Cd0.88Zn0.12Te, respectively. Both of these values deviate from the common anion rule, as may be expected given the unoccupied cation d orbitals in Mg. Application of our results to the design of current II-VI wide band-gap light emitters is discussed.
| Item Type: | Article |
|---|---|
| Additional Information: | Copyright © 1994 American Institute of Physics. Received 28 February 1994; accepted 8 April 1994. This work was supported by the Advanced Research Projects Agency monitored under ONR Contract No. N00014-92-J-1845. |
| Subject Keywords: | MOLECULAR-BEAM EPITAXY; II-VI-SEMICONDUCTORS; THIN-FILMS; GROWTH; ENERGY |
| Record Number: | CaltechAUTHORS:WANapl94 |
| Persistent URL: | http://resolver.caltech.edu/CaltechAUTHORS:WANapl94 |
| Alternative URL: | http://dx.doi.org/10.1063/1.111239 |
| Usage Policy: | No commercial reproduction, distribution, display or performance rights in this work are provided. |
| ID Code: | 2168 |
| Collection: | CaltechAUTHORS |
| Deposited By: | Tony Diaz |
| Deposited On: | 13 Mar 2006 |
| Last Modified: | 26 Dec 2012 08:47 |
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