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X-ray photoelectron spectroscopy measurement of valence-band offsets for Mg-based semiconductor compounds

Wang, M. W. and Swenberg, J. F. and Phillips, M. C. and Yu, E. T. and McCaldin, J. O. and Grant, R. W. and McGill, T. C. (1994) X-ray photoelectron spectroscopy measurement of valence-band offsets for Mg-based semiconductor compounds. Applied Physics Letters, 64 (25). pp. 3455-3457. ISSN 0003-6951. http://resolver.caltech.edu/CaltechAUTHORS:WANapl94

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Abstract

We have used x-ray photoelectron spectroscopy to measure the valence-band offsets for the lattice matched MgSe/Cd0.54Zn0.46Se and MgTe/Cd0.88Zn0.12Te heterojunctions grown by molecular beam epitaxy. By measuring core level to valence-band maxima and core level to core level binding energy separations, we obtain values of 0.56+/-0.07 eV and 0.43+/-0.11 eV for the valence-band offsets of MgSe/Cd0.54Zn0.46Se and MgTe/Cd0.88Zn0.12Te, respectively. Both of these values deviate from the common anion rule, as may be expected given the unoccupied cation d orbitals in Mg. Application of our results to the design of current II-VI wide band-gap light emitters is discussed.


Item Type:Article
Additional Information:Copyright © 1994 American Institute of Physics. Received 28 February 1994; accepted 8 April 1994. This work was supported by the Advanced Research Projects Agency monitored under ONR Contract No. N00014-92-J-1845.
Subject Keywords:MOLECULAR-BEAM EPITAXY; II-VI-SEMICONDUCTORS; THIN-FILMS; GROWTH; ENERGY
Record Number:CaltechAUTHORS:WANapl94
Persistent URL:http://resolver.caltech.edu/CaltechAUTHORS:WANapl94
Alternative URL:http://dx.doi.org/10.1063/1.111239
Usage Policy:No commercial reproduction, distribution, display or performance rights in this work are provided.
ID Code:2168
Collection:CaltechAUTHORS
Deposited By: Tony Diaz
Deposited On:13 Mar 2006
Last Modified:26 Dec 2012 08:47

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