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Interfacial strain in AlxGa1–xAs layers on GaAs

Speriosu, V. S. and Nicolet, M.-A. and Tandon, J. L. and Yeh, Y. C. M. (1985) Interfacial strain in AlxGa1–xAs layers on GaAs. Journal of Applied Physics, 57 (4). pp. 1377-1379. ISSN 0021-8979. http://resolver.caltech.edu/CaltechAUTHORS:SPEjap85

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Abstract

Detailed analysis of x-ray rocking curves was used to determine the depth profile of strain and composition in a 2500-Å-thick layer of AlxGa1–xAs grown by metalorganic chemical vapor deposition on 100 GaAs. The x value and layer thickness were in good agreement with the values expected from growth parameters. The presence of a transition region, 280 Å thick, was detected by the rocking curve. In this region, the Al concentration varies smoothly from 0 to 0.87. Measurement and control of the sharpness of such interfaces has important implications for heterojunction devices.


Item Type:Article
Additional Information:Copyright © 1985 American Institute of Physics. Received 9 March 1984; accepted 10 September 1984. We would like to thank D. A. Smith and A. Mehta at Applied Solar Energy Corporation for their assistance in sample preparation. The work at Caltech was financially supported by the Defense Advanced Research Projects Agency (MDA903-82-C-0348), (S. Roosild).
Subject Keywords:LAYERS; STRAINS; CHEMICAL COMPOSITION; THICKNESS; GALLIUM ARSENIDES; INTERFACE PHENOMENA; CHEMICAL VAPOR DEPOSITION; VAPOR DEPOSITED COATINGS; EPITAXIAL LAYERS; ORGANOMETALLIC COMPOUNDS; HETEROJUNCTIONS; X RADIATION
Record Number:CaltechAUTHORS:SPEjap85
Persistent URL:http://resolver.caltech.edu/CaltechAUTHORS:SPEjap85
Alternative URL:http://dx.doi.org/10.1063/1.334490
Usage Policy:No commercial reproduction, distribution, display or performance rights in this work are provided.
ID Code:2275
Collection:CaltechAUTHORS
Deposited By: Tony Diaz
Deposited On:21 Mar 2006
Last Modified:26 Dec 2012 08:48

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