Kolawa, E. and Garland, C. and Tran, L. and Nieh, C. W. and Molarius, J. M. and Flick, W. and Nicolet, M.-A. and Wei, J. (1988) Indium oxide diffusion barriers for Al/Si metallizations. Applied Physics Letters, 53 (26). pp. 2644-2646. ISSN 0003-6951. http://resolver.caltech.edu/CaltechAUTHORS:KOLapl88
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Indium oxide (In2O3) films were prepared by reactive rf sputtering of an In target in O2/Ar plasma. We have investigated the application of these films as diffusion barriers in Si/In2O3/Al and Si/TiSi2.3/In2O3/Al metallizations. Scanning transmission electron microscopy together with energy dispersive analysis of x ray of cross-sectional Si/In2O3/Al specimens, and electrical measurements on shallow n + -p junction diodes were used to evaluate the diffusion barrier capability of In2O3 films. We find that 100-nm-thick In2O3 layers prevent the intermixing between Al and Si in Si/In2O3/Al contacts up to 650°C for 30 min, which makes this material one of the best thin-film diffusion barriers on record between Al and Si. (The Si-Al eutectic temperature is 577°C, Al melts at 660°C.) When a contacting layer of titanium silicide is incorporated to form a Si/TiSi2.3/In2O3/Al metallization structure, the thermal stability of the contact drops to 600°C for 30 min heat treatment.
|Additional Information:||Copyright © 1988 American Institute of Physics. Received 25 August 1988; accepted 16 October 1988. We thank Rob Gorris for technical assistance and Madeline Haddad for help in the manuscript preparation. We acknowledge the financial support of the National Science Foundation under MRG grant DMR-8811795.|
|Subject Keywords:||DIFFUSION BARRIERS; INDIUM OXIDES; METALLIZATION; SILICON; ALUMINIUM; P–N JUNCTIONS; MIXING; THICKNESS; HIGH TEMPERATURE; LAYERS; ELECTRICAL PROPERTIES; STABILITY; METAL–SEMICONDUCTOR CONTACTS; FABRICATION|
|Usage Policy:||No commercial reproduction, distribution, display or performance rights in this work are provided.|
|Deposited By:||Tony Diaz|
|Deposited On:||25 Mar 2006|
|Last Modified:||26 Dec 2012 08:48|
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