Wang, Heng and Pei, Yanzhong and LaLonde, Aaron D. and Snyder, G. Jeffrey (2011) Heavily Doped p-Type PbSe with High Thermoelectric Performance: An Alternative for PbTe. Advanced Materials, 23 (11). pp. 1366-1370. ISSN 0935-9648 http://resolver.caltech.edu/CaltechAUTHORS:20110401-155349079
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PbSe was expected to have a smaller bandgap and higher thermalconductivity than PbTe. Instead, these values are about the same at high temperature leading to comparable thermoelectric figure of merit, with zT> 1 achieved in heavily doped p-type PbSe.
|Additional Information:||© 2011 Wiley. Received: November 14, 2010. Published online: February 10, 2011. This work is supported by NASA-JPL and DARPA Nano Materials Program.|
|Subject Keywords:||thermoelectrics; lead chalcogenides; PbSe; PbTe|
|Official Citation:||Heavily Doped p-Type PbSe with High Thermoelectric Performance: An Alternative for PbTe (pages 1366–1370) Heng Wang, Yanzhong Pei, Aaron D. LaLonde and G. Jeffrey Snyder Article first published online: 10 FEB 2011 | DOI: 10.1002/adma.201004200|
|Usage Policy:||No commercial reproduction, distribution, display or performance rights in this work are provided.|
|Deposited By:||Ruth Sustaita|
|Deposited On:||04 Apr 2011 16:03|
|Last Modified:||04 Apr 2011 16:03|
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