Wang, Heng and Pei, Yanzhong and LaLonde, Aaron D. and Snyder, G. Jeffrey (2011) Heavily Doped p-Type PbSe with High Thermoelectric Performance: An Alternative for PbTe. Advanced Materials, 23 (11). pp. 1366-1370. ISSN 0935-9648 http://resolver.caltech.edu/CaltechAUTHORS:20110401-155349079
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Abstract
PbSe was expected to have a smaller bandgap and higher thermalconductivity than PbTe. Instead, these values are about the same at high temperature leading to comparable thermoelectric figure of merit, with zT> 1 achieved in heavily doped p-type PbSe.
| Item Type: | Article | ||||||
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| Additional Information: | © 2011 Wiley. Received: November 14, 2010. Published online: February 10, 2011. This work is supported by NASA-JPL and DARPA Nano Materials Program. | ||||||
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| Subject Keywords: | thermoelectrics; lead chalcogenides; PbSe; PbTe | ||||||
| Record Number: | CaltechAUTHORS:20110401-155349079 | ||||||
| Persistent URL: | http://resolver.caltech.edu/CaltechAUTHORS:20110401-155349079 | ||||||
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| Official Citation: | Heavily Doped p-Type PbSe with High Thermoelectric Performance: An Alternative for PbTe (pages 1366–1370) Heng Wang, Yanzhong Pei, Aaron D. LaLonde and G. Jeffrey Snyder Article first published online: 10 FEB 2011 | DOI: 10.1002/adma.201004200 | ||||||
| Usage Policy: | No commercial reproduction, distribution, display or performance rights in this work are provided. | ||||||
| ID Code: | 23216 | ||||||
| Collection: | CaltechAUTHORS | ||||||
| Deposited By: | Ruth Sustaita | ||||||
| Deposited On: | 04 Apr 2011 16:03 | ||||||
| Last Modified: | 04 Apr 2011 16:03 |
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