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Summary Abstract: HgTe–CdTe superlattices

McGill, T. C. and Smith, D. L. (1983) Summary Abstract: HgTe–CdTe superlattices. Journal of Vacuum Science and Technology B, 1 (2). pp. 260-261. ISSN 1071-1023. http://resolver.caltech.edu/CaltechAUTHORS:MCGjvstb83

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Abstract

In their seminal paper on superlattices, Esaki and Tsu indicated that superlattices involving II-VI compounds and their alloys, could be of interest along with superlattices involving Group IV and III-V semiconductors. Independently, Schulman and McGill identified the Hg-Te-CdTe superlattice as an interesting case to study. HgTe and CdTe have the same crystal structure and lattice constrant to 0.3%. CdTe is a conventional zinc blende semiconductor with a band gap of about 1.6 eV; HgTe is a zero band gap semiconductor. Hence, HgTe-CdTe superlattices are expected to span a wide range of properties.


Item Type:Article
Additional Information:© 1983 American Vacuum Society. (Received 25 February 1983; accepted 3 March 1983) The authors gratefully acknowledge the support of the Army Research Office under Contract No. DAAG29-80-C-0103.
Record Number:CaltechAUTHORS:MCGjvstb83
Persistent URL:http://resolver.caltech.edu/CaltechAUTHORS:MCGjvstb83
Alternative URL:http://dx.doi.org/10.1116/1.582498
Usage Policy:No commercial reproduction, distribution, display or performance rights in this work are provided.
ID Code:2330
Collection:CaltechAUTHORS
Deposited By: Archive Administrator
Deposited On:28 Mar 2006
Last Modified:26 Dec 2012 08:48

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