McGill, T. C. (1974) Phenomenology of metal-semiconductor electrical barriers. Journal of Vacuum Science and Technology, 11 (6). pp. 935-942. ISSN 0022-5355 http://resolver.caltech.edu/CaltechAUTHORS:MCGjvst74a
See Usage Policy.
Use this Persistent URL to link to this item: http://resolver.caltech.edu/CaltechAUTHORS:MCGjvst74a
The phenomenological rules governing the values of electrical barriers between metals, and semiconductors or insulators are reviewed. The barrier energies on ionic insulators are shown to vary strongly with metal electronegativity, while in the case of covalent semiconductors, the barrier energies are relatively independent of the metal. The barrier energy from the metal Fermi level to the conduction band of the semiconductor is shown to be approximately two thirds of the semiconductor band gap with certain exceptions. The success of a simple barrier model in accounting for the properties of the barrier are reviewed. The variation of barrier energy with electrical field is reported for Al-SiO2, Al-GaSe, and Al-GaAs and compared with simple theory including image-force lowering and field penetration into the metal. Transport through interfacial barriers is illustrated by discussing transport through metal-GaSe-metal structures and metal-InAs Schottky barriers.
|Additional Information:||©1974 American Vacuum Society. (Received 30 August 1974) Supported in part by the Office of Naval Research under Contract No. N00014-67-A-0094-0036.|
|Usage Policy:||No commercial reproduction, distribution, display or performance rights in this work are provided.|
|Deposited By:||Archive Administrator|
|Deposited On:||28 Mar 2006|
|Last Modified:||26 Dec 2012 08:48|
Repository Staff Only: item control page