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Neutral impurity scattering in semiconductors

McGill, T. C. and Baron, R. (1975) Neutral impurity scattering in semiconductors. Physical Review B, 11 (12). pp. 5208-5210. ISSN 0556-2805. http://resolver.caltech.edu/CaltechAUTHORS:MCGprb75

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Abstract

The drift mobility and ratio of Hall to drift mobility are computed for the scattering of carriers by a hydrogenic neutral impurity. The scattering is treated using the almost exact values of the phase shifts for scattering of electrons by neutral hydrogen scaled for the effective mass and dielectric constant of the semiconductor.


Item Type:Article
Additional Information:©1975 The American Physical Society Received 2 December 1974 Work supported in part by Air Force Office of Scientific Research under Grant No. 73-2490. Alfred P. Sloan Foundation Fellow.
Record Number:CaltechAUTHORS:MCGprb75
Persistent URL:http://resolver.caltech.edu/CaltechAUTHORS:MCGprb75
Alternative URL:http://dx.doi.org/10.1103/PhysRevB.11.5208
Usage Policy:No commercial reproduction, distribution, display or performance rights in this work are provided.
ID Code:2337
Collection:CaltechAUTHORS
Deposited By: Archive Administrator
Deposited On:28 Mar 2006
Last Modified:26 Dec 2012 08:48

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