McGill, T. C. and Baron, R. (1975) Neutral impurity scattering in semiconductors. Physical Review B, 11 (12). pp. 5208-5210. ISSN 0556-2805 http://resolver.caltech.edu/CaltechAUTHORS:MCGprb75
![[img]](http://authors.library.caltech.edu/style/images/fileicons/application_pdf.png)
|
PDF
See Usage Policy. 406Kb |
Use this Persistent URL to link to this item: http://resolver.caltech.edu/CaltechAUTHORS:MCGprb75
Abstract
The drift mobility and ratio of Hall to drift mobility are computed for the scattering of carriers by a hydrogenic neutral impurity. The scattering is treated using the almost exact values of the phase shifts for scattering of electrons by neutral hydrogen scaled for the effective mass and dielectric constant of the semiconductor.
| Item Type: | Article |
|---|---|
| Additional Information: | ©1975 The American Physical Society Received 2 December 1974 Work supported in part by Air Force Office of Scientific Research under Grant No. 73-2490. Alfred P. Sloan Foundation Fellow. |
| Record Number: | CaltechAUTHORS:MCGprb75 |
| Persistent URL: | http://resolver.caltech.edu/CaltechAUTHORS:MCGprb75 |
| Alternative URL: | http://dx.doi.org/10.1103/PhysRevB.11.5208 |
| Usage Policy: | No commercial reproduction, distribution, display or performance rights in this work are provided. |
| ID Code: | 2337 |
| Collection: | CaltechAUTHORS |
| Deposited By: | Archive Administrator |
| Deposited On: | 28 Mar 2006 |
| Last Modified: | 26 Dec 2012 08:48 |
Repository Staff Only: item control page
