Cheng, X.-C. and McGill, T. C. (1999) Near infrared avalanche photodiodes with bulk Al0.04Ga0.96Sb and GaSb/AlSb superlattice gain layers. Journal of Applied Physics, 86 (8). pp. 4576-4579. ISSN 0021-8979 http://resolver.caltech.edu/CaltechAUTHORS:CHEjap99
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We demonstrate the use of bulk Al0.04Ga0.96Sb and GaSb/AlSb superlattice as the gain material in a separate absorption/multiplication avalanche photodiode with sensitivity up to 1.74 µm. Both gain schemes were implemented in a molecular-beam epitaxy grown structure with a selectively doped InAs/AlSb superlattice as the n-type layer. Hole impact ionization enhancement was observed in Al0.04Ga0.96Sb by using a two wavelength injection scheme. The superlattice gain layer device exhibited multiplication factors in excess of 300, and surface limited dark current at a level comparable to InGaAs/InAlAs devices of similar design. The superlattice gain layer was found to be more promising than its bulk counterpart due to its inherent lower dark current.
|Additional Information:||©1999 American Institute of Physics. (Received 5 April 1999; accepted 14 July 1999) The authors would like to thank A. T. Hunter and D. H. Chow of Hughes Research Lab for helpful discussion of antimonide growth and avalanche photodiode. This research was supported by the Defense Advanced Research Projects Agency and the Army Research Laboratory under Contract No. DAAL 01-97-K-0121.|
|Subject Keywords:||gallium compounds; aluminium compounds; III-V semiconductors; avalanche photodiodes; sensitivity; dark conductivity; semiconductor superlattices; molecular beam epitaxial growth; semiconductor growth; impact ionisation|
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|Deposited On:||03 Apr 2006|
|Last Modified:||26 Dec 2012 08:49|
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