Kumar, Amit and Lewis, Nathan S. (1990) Studies of silicon photoelectrochemical cells under high injection conditions. Applied Physics Letters, 57 (25). pp. 2730-2732. ISSN 0003-6951 http://resolver.caltech.edu/CaltechAUTHORS:KUMapl90a
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The behavior of Si/CH3OH-dimethylferrocene+/0 junctions has been investigated under high injection conditions. Open circuit voltages of (626±5) mV were obtained at short circuit photocurrent densities of 20 mA/cm^2 for samples with an n + -diffused back region, point contacts on the back surface, and with a base of thickness 390 µm and a 1 ms hole lifetime. The diode quality factor and recombination current density were 1.8±0.1 and (2.6±1.5)×10–8 A/cm^2, respectively. These data are consistent with recombination dominated by the base and back contact regions, and not at the Si/CH3OH interface.
|Additional Information:||© 1990 American Institute of Physics. (Received 2 July 1990; accepted 21 September 1990) We thank the National Science Foundation for support of this work. This is contribution No. 8167 from the Caltech Division of Chemistry and Chemical Engineering. We also thank Ronald A. Sinton and Richard M. Swanson of the Stanford Electronics Laboratory (Stanford, CA) for invaluable discusisons and for supplying the samples used in this study. A. K. acknowledges the Department of Education for a Research Fellowship.|
|Subject Keywords:||SILICON; THRESHOLD CURRENT; PHOTOCURRENTS; SILICON DIODES; PHOTOELECTROCHEMICAL CELLS; OPERATION; SEMICONDUCTOR–ELECTROLYTIC CONTACTS; PHOTOCONDUCTIVITY|
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|Deposited On:||03 Apr 2006|
|Last Modified:||26 Dec 2012 08:49|
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