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Electron diffusion length and lifetime in p-type GaN

Bandić, Z. Z. and Bridger, P. M. and Piquette, E. C. and McGill, T. C. (1998) Electron diffusion length and lifetime in p-type GaN. Applied Physics Letters, 73 (22). pp. 3276-3278. ISSN 0003-6951.

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We report on electron beam induced current and current–voltage (I–V) measurements on Schottky diodes on p-type doped GaN layers grown by metal organic chemical vapor deposition. A Schottky barrier height of 0.9 eV was measured for the Ti/Au Schottky contact from the I–V data. A minority carrier diffusion length for electrons of (0.2 ± 0.05) µm was measured for the first time in GaN. This diffusion length corresponds to an electron lifetime of approximately 0.1 ns. We attempted to correlate the measured electron diffusion length and lifetime with several possible recombination mechanisms in GaN and establish connection with electronic and structural properties of GaN.

Item Type:Article
Additional Information:©1998 American Institute of Physics. (Received 31 August 1998; accepted 2 October 1998) This work was supported DARPA and monitored by the ONR under Grant No. N00014-92-J-1845.
Subject Keywords:gallium compounds; III-V semiconductors; semiconductor thin films; CVD coatings; carrier lifetime; minority carriers; electron-hole recombination; EBIC; Schottky barriers
Record Number:CaltechAUTHORS:BANapl98b
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Usage Policy:No commercial reproduction, distribution, display or performance rights in this work are provided.
ID Code:2454
Deposited By: Archive Administrator
Deposited On:04 Apr 2006
Last Modified:26 Dec 2012 08:49

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