Bandić, Z. Z. and Bridger, P. M. and Piquette, E. C. and McGill, T. C. (1998) Electron diffusion length and lifetime in p-type GaN. Applied Physics Letters, 73 (22). pp. 3276-3278. ISSN 0003-6951 http://resolver.caltech.edu/CaltechAUTHORS:BANapl98b
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We report on electron beam induced current and current–voltage (I–V) measurements on Schottky diodes on p-type doped GaN layers grown by metal organic chemical vapor deposition. A Schottky barrier height of 0.9 eV was measured for the Ti/Au Schottky contact from the I–V data. A minority carrier diffusion length for electrons of (0.2 ± 0.05) µm was measured for the first time in GaN. This diffusion length corresponds to an electron lifetime of approximately 0.1 ns. We attempted to correlate the measured electron diffusion length and lifetime with several possible recombination mechanisms in GaN and establish connection with electronic and structural properties of GaN.
|Additional Information:||©1998 American Institute of Physics. (Received 31 August 1998; accepted 2 October 1998) This work was supported DARPA and monitored by the ONR under Grant No. N00014-92-J-1845.|
|Subject Keywords:||gallium compounds; III-V semiconductors; semiconductor thin films; CVD coatings; carrier lifetime; minority carriers; electron-hole recombination; EBIC; Schottky barriers|
|Usage Policy:||No commercial reproduction, distribution, display or performance rights in this work are provided.|
|Deposited By:||Archive Administrator|
|Deposited On:||04 Apr 2006|
|Last Modified:||26 Dec 2012 08:49|
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