Ragan, Regina and Ahn, Channing C. and Atwater, Harry A. (2003) Nonlithographic epitaxial SnxGe1–x dense nanowire arrays grown on Ge(001). Applied Physics Letters, 82 (20). pp. 3439-3441. ISSN 0003-6951. http://resolver.caltech.edu/CaltechAUTHORS:RAGapl03
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We have grown 1-µm-thick SnxGe1–x/Ge(001) epitaxial films with 0<x<0.085 by molecular-beam epitaxy. These films evolve during growth into a dense array of SnxGe1–x nanowires oriented along , as confirmed by composition contrast observed in scanning transmission electron microscopy in planar view. The Sn-rich regions in these films dominate optical absorption at low energy; phase-separated SnxGe1–x alloys have a lower-energy band gap than homogeneous alloys with the same average Sn composition.
|Additional Information:||©2003 American Institute of Physics. (Received 26 March 2002; accepted 29 January 2003) The National Science Foundation supported this work. One author (R. R.) acknowledges support in the form of an Intel fellowship.|
|Subject Keywords:||tin alloys; germanium alloys; semiconductor materials; nanowires; arrays; semiconductor epitaxial layers; molecular beam epitaxial growth; semiconductor growth; energy gap; scanning-transmission electron microscopy; Fourier transform spectra; infrared spectra|
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|Deposited By:||Archive Administrator|
|Deposited On:||04 Apr 2006|
|Last Modified:||26 Dec 2012 08:49|
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