Bridger, P. M. and Bandić, Z. Z. and Piquette, E. C. and McGill, T. C. (1998) Correlation between the surface defect distribution and minority carrier transport properties in GaN. Applied Physics Letters, 73 (23). pp. 3438-3440. ISSN 0003-6951. http://resolver.caltech.edu/CaltechAUTHORS:BRIapl98
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We have studied linear dislocations and surface defects in p- and n-type metalorganic chemical vapor deposition, hydride vapor phase epitaxy, and molecular beam epitaxy grown GaN films on sapphire with atomic force microscopy. The surface pits due to threading dislocations were found not to be distributed randomly but on the boundaries of growth columns. The dislocations are thought to be electrically active since the average distance between them (average column size) is comparable to minority carrier diffusion lengths as measured by electron beam induced current experiments on Schottky diodes fabricated with the same material. Diffusion lengths found for holes and electrons are on the order of Lp = 0.28 µm and Le = 0.16 µm which corresponded to the sizes of regions free from surface dislocations in both cases and can be described by a simple model of recombination on grain boundaries.
|Additional Information:||©1998 American Institute of Physics. (Received 20 May 1998; accepted 6 October 1998) This work was supported in part by the Defense Advanced Research Project under N00014-92-J-1845 and monitored by the Office of Naval Research. The authors would also like to thank J. Redwing, R. P. Vaudo, and V. M. Phanse of ATMI Inc. for the HVPE sample.|
|Subject Keywords:||gallium compounds; III-V semiconductors; wide band gap semiconductors; minority carriers; carrier lifetime; dislocation structure; semiconductor epitaxial layers; atomic force microscopy; surface structure; surface recombination|
|Usage Policy:||No commercial reproduction, distribution, display or performance rights in this work are provided.|
|Deposited By:||Archive Administrator|
|Deposited On:||04 Apr 2006|
|Last Modified:||26 Dec 2012 08:49|
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