Bandić, Z. Z. and Bridger, P. M. and Piquette, E. C. and McGill, T. C. and Vaudo, R. P. and Phanse, V. M. and Redwing, J. M. (1999) High voltage (450 V) GaN Schottky rectifiers. Applied Physics Letters, 74 (9). pp. 1266-1268. ISSN 0003-6951 http://resolver.caltech.edu/CaltechAUTHORS:BANapl99
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We fabricated high standoff voltage (450 V) Schottky rectifiers on hydride vapor phase epitaxy grown GaN on sapphire substrate. Several Schottky device geometries were investigated, including lateral geometry with rectangular and circular contacts, mesa devices, and Schottky metal field plate overlapping a SiO2 layer. The best devices were characterized by an ON-state voltage of 4.2 V at a current density of 100 A/cm2 and a saturation current density of 10^–5 A/cm2 at a reverse bias of 100 V. From the measured breakdown voltage we estimated the critical field for electric breakdown in GaN to be (2.2 ± 0.7) × 10^6 V/cm. This value for the critical field is a lower limit since most of the devices exhibited abrupt and premature breakdown associated with corner and edge effects.
|Additional Information:||©1999 American Institute of Physics. (Received 31 August 1998; accepted 23 December 1998) This work was supported by DARPA and monitored by the ONR under Grant No. N00014-92-J-1845, and was also supported by DARPA/EPRI and monitored by the ONR under Grant. No. MDA972-98-1-0006.|
|Subject Keywords:||gallium compounds; III-V semiconductors; current density; solid-state rectifiers; Schottky diodes; vapour phase epitaxial growth; semiconductor growth; semiconductor device breakdown; high-voltage techniques|
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|Deposited On:||04 Apr 2006|
|Last Modified:||26 Dec 2012 08:49|
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