Bushmaker, Adam W. and Chang, Chia-Chi and Deshpande, Vikram V. and Amer, Moh. R. and Bockrath, Marc W. and Cronin, Stephen B. (2011) Memristive Behavior Observed in a Defected Single-Walled Carbon Nanotube. IEEE Transactions on Nanotechnology, 10 (3). pp. 582-586. ISSN 1536-125X http://resolver.caltech.edu/CaltechAUTHORS:20110805-091357330
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Abstract
Memristive electrical behavior has recently gained attention because of technological advances in nanostructuring, which has enabled the fabrication of working devices. However, such investigations have been limited to mobile ionic systems, and memristive behavior in other types of nanoscale systems has been largely overlooked. Here, we report direct measurement of memristive behavior of defect states in a quasi-metallic, single-walled carbon nanotube (CNT) FET. After exposing the CNT FET to laser irradiation, the conductance–gate-voltage profile (G–V_g ) indicates the creation of a gate-tunable, resonant electron scattering defect. Once a defect is formed, current flowing in the forward and reverse directions reversibly switches the G–V_g characteristics of the device. The changes in conductance are attributed to the current direction-sensitive changes in the structure of an isolated defect state in the nanotube. The defect-scattering spectra are extracted from the G–V_g data using a Landauer model.
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| Additional Information: | © 2011 IEEE. Manuscript received November 13, 2009; revised March 31, 2010; accepted April 30, 2010. Date of publication June 21, 2010; date of current version May 11, 2011. This work was supported in part by Department of Energy Award DE-FG02-07ER46376 and in part by the National Science Foundation (NSF) Graduate Research Fellowship Program. The review of this paper was arranged by Associate Editor C. Zhou. A part of this paper was done at the University of California, Santa Barbara Nanofabrication Facility, which is a part of the NSF funded National Nanotechnology Infrastructure Network. | ||||||
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| Subject Keywords: | Annealing; carbon nanotube (CNT); defects; lasers; memristive systems | ||||||
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| Record Number: | CaltechAUTHORS:20110805-091357330 | ||||||
| Persistent URL: | http://resolver.caltech.edu/CaltechAUTHORS:20110805-091357330 | ||||||
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| Official Citation: | Bushmaker, A.W.; Chia-Chi Chang; Deshpande, V.V.; Amer, M.R.; Bockrath, M.W.; Cronin, S.B.; , "Memristive Behavior Observed in a Defected Single-Walled Carbon Nanotube," Nanotechnology, IEEE Transactions on , vol.10, no.3, pp.582-586, May 2011 doi: 10.1109/TNANO.2010.2053717 URL: http://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=5491183&isnumber=5764947 | ||||||
| Usage Policy: | No commercial reproduction, distribution, display or performance rights in this work are provided. | ||||||
| ID Code: | 24702 | ||||||
| Collection: | CaltechAUTHORS | ||||||
| Deposited By: | Tony Diaz | ||||||
| Deposited On: | 05 Aug 2011 18:36 | ||||||
| Last Modified: | 09 May 2012 17:03 |
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