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Localized charge injection in SiO2 films containing silicon nanocrystals

Boer, Elizabeth A. and Brongersma, Mark L. and Atwater, Harry A. and Flagan, Richard C. and Bell, L. D. (2001) Localized charge injection in SiO2 films containing silicon nanocrystals. Applied Physics Letters, 79 (6). pp. 791-793. ISSN 0003-6951. http://resolver.caltech.edu/CaltechAUTHORS:BOEapl01b

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Abstract

An atomic-force microscope (AFM) is used to locally inject, detect, and quantify the amount and location of charge in SiO2 films containing Si nanocrystals (size ~2–6 nm). By comparison with control samples, charge trapping is shown to be due to nanocrystals and not ion-implantation-induced defects in samples containing ion-beam-synthesized Si nanocrystals. Using an electrostatic model and AFM images of charge we have estimated the amount of charge injected in a typical experiment to be a few hundred electrons and the discharge rate to be ~35±15 e/min.


Item Type:Article
Additional Information:©2001 American Institute of Physics. (Received 14 July 2000; accepted 14 May 2001) The research described in this letter was jointly sponsored by the National Aeronautics and Space Administration (NASA) and the Jet Propulsion Laboratory Director’s Research and Development Fund, and by the National Science Foundation under Grant No. DMR 98-71850.
Subject Keywords:silicon compounds; silicon; elemental semiconductors; insulating thin films; semiconductor quantum dots; nanostructured materials; nanotechnology; charge injection; atomic force microscopy; electron traps; hole traps; ion implantation; impurity states
Record Number:CaltechAUTHORS:BOEapl01b
Persistent URL:http://resolver.caltech.edu/CaltechAUTHORS:BOEapl01b
Alternative URL:http://dx.doi.org/10.1063/1.1383574
Usage Policy:No commercial reproduction, distribution, display or performance rights in this work are provided.
ID Code:2483
Collection:CaltechAUTHORS
Deposited By: Archive Administrator
Deposited On:05 Apr 2006
Last Modified:26 Dec 2012 08:49

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