Fan, Xiaofeng and Zeng, Gehong and LaBounty, Chris and Bowers, John E. and Croke, Edward and Ahn, Channing C. and Huxtable, Scott and Majumdar, Arun and Shakouri, Ali (2001) SiGeC/Si superlattice microcoolers. Applied Physics Letters, 78 (11). pp. 1580-1582. ISSN 0003-6951 http://resolver.caltech.edu/CaltechAUTHORS:FANapl01
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Abstract
Monolithically integrated active cooling is an attractive way for thermal management and temperature stabilization of microelectronic and optoelectronic devices. SiGeC can be lattice matched to Si and is a promising material for integrated coolers. SiGeC/Si superlattice structures were grown on Si substrates by molecular beam epitaxy. Thermal conductivity was measured by the 3omega method. SiGeC/Si superlattice microcoolers with dimensions as small as 40×40 µm^2 were fabricated and characterized. Cooling by as much as 2.8 and 6.9 K was measured at 25 °C and 100 °C, respectively, corresponding to maximum spot cooling power densities on the order of 1000 W/cm^2.
| Item Type: | Article |
|---|---|
| Additional Information: | ©2001 American Institute of Physics. (Received 8 November 2000; accepted 24 January 2001) This work is supported by DARPA HERETIC program and the Army Research Office. |
| Subject Keywords: | Ge-Si alloys; silicon; thermal management (packaging); thermal stability; semiconductor superlattices; thermal conductivity; molecular beam epitaxial growth; cooling; thermoelectric devices; semiconductor materials |
| Record Number: | CaltechAUTHORS:FANapl01 |
| Persistent URL: | http://resolver.caltech.edu/CaltechAUTHORS:FANapl01 |
| Alternative URL: | http://dx.doi.org/10.1063/1.1356455 |
| Usage Policy: | No commercial reproduction, distribution, display or performance rights in this work are provided. |
| ID Code: | 2486 |
| Collection: | CaltechAUTHORS |
| Deposited By: | Archive Administrator |
| Deposited On: | 05 Apr 2006 |
| Last Modified: | 26 Dec 2012 08:49 |
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