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SiGeC/Si superlattice microcoolers

Fan, Xiaofeng and Zeng, Gehong and LaBounty, Chris and Bowers, John E. and Croke, Edward and Ahn, Channing C. and Huxtable, Scott and Majumdar, Arun and Shakouri, Ali (2001) SiGeC/Si superlattice microcoolers. Applied Physics Letters, 78 (11). pp. 1580-1582. ISSN 0003-6951. http://resolver.caltech.edu/CaltechAUTHORS:FANapl01

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Abstract

Monolithically integrated active cooling is an attractive way for thermal management and temperature stabilization of microelectronic and optoelectronic devices. SiGeC can be lattice matched to Si and is a promising material for integrated coolers. SiGeC/Si superlattice structures were grown on Si substrates by molecular beam epitaxy. Thermal conductivity was measured by the 3omega method. SiGeC/Si superlattice microcoolers with dimensions as small as 40×40 µm^2 were fabricated and characterized. Cooling by as much as 2.8 and 6.9 K was measured at 25 °C and 100 °C, respectively, corresponding to maximum spot cooling power densities on the order of 1000 W/cm^2.


Item Type:Article
Additional Information:©2001 American Institute of Physics. (Received 8 November 2000; accepted 24 January 2001) This work is supported by DARPA HERETIC program and the Army Research Office.
Subject Keywords:Ge-Si alloys; silicon; thermal management (packaging); thermal stability; semiconductor superlattices; thermal conductivity; molecular beam epitaxial growth; cooling; thermoelectric devices; semiconductor materials
Record Number:CaltechAUTHORS:FANapl01
Persistent URL:http://resolver.caltech.edu/CaltechAUTHORS:FANapl01
Alternative URL:http://dx.doi.org/10.1063/1.1356455
Usage Policy:No commercial reproduction, distribution, display or performance rights in this work are provided.
ID Code:2486
Collection:CaltechAUTHORS
Deposited By: Archive Administrator
Deposited On:05 Apr 2006
Last Modified:26 Dec 2012 08:49

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