Pettersson, P. O. and Ahn, C. C. and McGill, T. C. and Croke, E. T. and Hunter, A. T. (1995) Sb-surfactant-mediated growth of Si/Si1–yCy superlattices by molecular-beam epitaxy. Applied Physics Letters, 67 (17). pp. 2530-2532. ISSN 0003-6951 http://resolver.caltech.edu/CaltechAUTHORS:PETapl95
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Abstract
Si/Si0.97C0.03 superlattices were grown on Si(001) substrates by molecular beam epitaxy (MBE) to study the use of Sb as a surfactant during Si1–yCy growth. In situ reflection high energy electron diffraction (RHEED) shows that while carbon easily disrupts the two-dimensional growth of homoepitaxial Si, such disruption is suppressed for layers grown on Sb-terminated Si(001) surfaces. Cross-sectional transmission electron microscopy (TEM) reveals that for samples grown without the use of Sb, the Si/Si0.97C0.03 interfaces (Si0.97C0.03 on Si) were much more abrupt than Si0.97C0.03/Si interfaces. In the case of Sb-mediated growth, differences in abruptness between the two types of interfaces were not readily observable.
| Item Type: | Article |
|---|---|
| Additional Information: | ©1995 American Institute of Physics. (Received 22 June 1995; accepted 16 August 1995) This study was supported in part by ONR N00014-93-1-0710. We are grateful for Carol Garland’s assistance in obtaining the TEM images. |
| Subject Keywords: | ANTIMONY; INTERFACE STRUCTURE; MOLECULAR BEAM EPITAXY; MORPHOLOGY; RHEED; SILICON CARBIDES; SILICON; SUPERLATTICES; SURFACTANTS; TEM |
| Record Number: | CaltechAUTHORS:PETapl95 |
| Persistent URL: | http://resolver.caltech.edu/CaltechAUTHORS:PETapl95 |
| Alternative URL: | http://dx.doi.org/10.1063/1.114448 |
| Usage Policy: | No commercial reproduction, distribution, display or performance rights in this work are provided. |
| ID Code: | 2488 |
| Collection: | CaltechAUTHORS |
| Deposited By: | Archive Administrator |
| Deposited On: | 05 Apr 2006 |
| Last Modified: | 26 Dec 2012 08:49 |
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