Pettersson, P. O. and Ahn, C. C. and McGill, T. C. and Croke, E. T. and Hunter, A. T. (1995) Sb-surfactant-mediated growth of Si/Si1–yCy superlattices by molecular-beam epitaxy. Applied Physics Letters, 67 (17). pp. 2530-2532. ISSN 0003-6951. http://resolver.caltech.edu/CaltechAUTHORS:PETapl95
See Usage Policy.
Use this Persistent URL to link to this item: http://resolver.caltech.edu/CaltechAUTHORS:PETapl95
Si/Si0.97C0.03 superlattices were grown on Si(001) substrates by molecular beam epitaxy (MBE) to study the use of Sb as a surfactant during Si1–yCy growth. In situ reflection high energy electron diffraction (RHEED) shows that while carbon easily disrupts the two-dimensional growth of homoepitaxial Si, such disruption is suppressed for layers grown on Sb-terminated Si(001) surfaces. Cross-sectional transmission electron microscopy (TEM) reveals that for samples grown without the use of Sb, the Si/Si0.97C0.03 interfaces (Si0.97C0.03 on Si) were much more abrupt than Si0.97C0.03/Si interfaces. In the case of Sb-mediated growth, differences in abruptness between the two types of interfaces were not readily observable.
|Additional Information:||©1995 American Institute of Physics. (Received 22 June 1995; accepted 16 August 1995) This study was supported in part by ONR N00014-93-1-0710. We are grateful for Carol Garland’s assistance in obtaining the TEM images.|
|Subject Keywords:||ANTIMONY; INTERFACE STRUCTURE; MOLECULAR BEAM EPITAXY; MORPHOLOGY; RHEED; SILICON CARBIDES; SILICON; SUPERLATTICES; SURFACTANTS; TEM|
|Usage Policy:||No commercial reproduction, distribution, display or performance rights in this work are provided.|
|Deposited By:||Archive Administrator|
|Deposited On:||05 Apr 2006|
|Last Modified:||26 Dec 2012 08:49|
Repository Staff Only: item control page