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Fabrication of minority-carrier-limited n-Si/insulator/metal diodes

Kumar, Amit and Rosenblum, Mark D. and Gilmore, Delwyn L. and Tufts, Bruce J. and Rosenbluth, Mary L. and Lewis, Nathan S. (1990) Fabrication of minority-carrier-limited n-Si/insulator/metal diodes. Applied Physics Letters, 56 (19). pp. 1919-1921. ISSN 0003-6951. http://resolver.caltech.edu/CaltechAUTHORS:KUMapl90b

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Abstract

A photoelectrochemical anodization technique has been used to fabricate n-Si/insulator/metal (MIS) diodes with improved electrical properties. MIS structures fabricated with Au have provided the first experimental observation of a solid-state n-Si surface barrier device whose open circuit voltage Voc is controlled by minority-carrier bulk diffusion/recombination processes. For these diodes, variation of the minority-carrier diffusion length and majority-carrier dopant density produced changes in Voc that were in accord with bulk diffusion/recombination theory. Additionally, the variation in Voc in response to changes in the work function of the metal overlayer indicated that these MIS devices were not subject to the Fermi level pinning restrictions observed for n-Si Schottky structures. X-ray photoelectron spectroscopic characterization of the anodically grown insulator indicated 8.2±0.9 Å of a strained SiO2 layer as the interfacial insulator resulting from the photoanodization process.


Item Type:Article
Additional Information:© 1990 American Institute of Physics (Received 11 December 1989; accepted 26 February 1990) We thank the Department of Energy, Office of Basic Energy Sciences, for support of this work. Generous support for D.L.G was provided by the SURF program at Caltech. We acknowledge F. J. Grunthaner, P. J. Grunthaner, R. P. Vasquez, and M. H. Hecht of the Jet Propulsion Laboratory, Pasadena, CA for access to the XPS instrument used in this study and for helpful discussions regarding this work. This work was performed at Division of Chemistry and Chemical Engineering, California Institute of Technology, contribution No. 8072.
Subject Keywords:SEMICONDUCTOR DIODES; FABRICATION; ANODIZATION; PHOTOELECTROCHEMICAL CELLS; CHARGE CARRIERS; SOLAR CELLS; PHOTODIODES; MIS JUNCTIONS; MINORITY CARRIERS
Record Number:CaltechAUTHORS:KUMapl90b
Persistent URL:http://resolver.caltech.edu/CaltechAUTHORS:KUMapl90b
Alternative URL:http://dx.doi.org/10.1063/1.103044
Usage Policy:No commercial reproduction, distribution, display or performance rights in this work are provided.
ID Code:2493
Collection:CaltechAUTHORS
Deposited By: Archive Administrator
Deposited On:05 Apr 2006
Last Modified:26 Dec 2012 08:49

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