Richardson, Christine E. and Mason, Maribeth S. and Atwater, Harry A. (2005) A Phase Diagram for Morphology and Properties of Low Temperature Deposited Polycrystalline Silicon Grown by Hot-wire Chemical Vapor Deposition. In: 2005 Conference Record of the Thirty-First IEEE Photovoltaic Specialists Conference. IEEE , Piscataway, NJ, pp. 951-954. ISBN 0-7803-8707-4 http://resolver.caltech.edu/CaltechAUTHORS:20110826-083315279
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The fabrication of low temperature polycrystalline silicon with internal surface passivation and with lifetimes close to single crystalline silicon is a promising direction for thin film polycrystalline silicon photovoltaics. To achieve high lifetimes, large grains with passivated low-angle grain boundaries and intragranular defects are required. We investigate the low-temperature (300-475 °C) growth of thin silicon films by hot-wire chemical vapor deposition (HWCVD) on Si (100) substrates and on large-grained polycrystalline silicon template layers formed by selective nucleation and solid phase epitaxy (SNSPE). Phase diagrams for dilute silane deposition varying substrate temperature and for pure silane varying hydrogen dilution are shown. We will discuss the relationship between the microstructure and photoconductive decay lifetimes of these undoped layers on Si (100) and SNSPE templates as well as their suitability for use in thin-film photovoltaic applications.
|Item Type:||Book Section|
|Additional Information:||© 2005 IEEE. Date of Current Version: 08 August 2005. The authors would like to thank C.M. Garland for her TEM analysis of the films on templates and R.K. Ahrenkiel for the RCPCD measurements. The authors would also like to thank BP Solar, NREL, and Corning Inc. for their financial support.|
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|Official Citation:||Richardson, C.E.; Mason, M.S.; Atwater, H.A.; , "A phase diagram for morphology and properties of low temperature deposited polycrystalline silicon grown by hot-wire chemical vapor deposition," Photovoltaic Specialists Conference, 2005. Conference Record of the Thirty-first IEEE , vol., no., pp. 951- 954, 3-7 Jan. 2005 doi: 10.1109/PVSC.2005.1488289|
|Usage Policy:||No commercial reproduction, distribution, display or performance rights in this work are provided.|
|Deposited By:||Ruth Sustaita|
|Deposited On:||26 Aug 2011 16:17|
|Last Modified:||26 Aug 2011 16:17|
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