Barton, John J. and Swarts, Coenraad A. and Goddard, William A., III and McGill, T. C. (1980) Chemisorption of oxygen and aluminum on the GaAs (110) surface from ab initio theory. Journal of Vacuum Science and Technology, 17 (1). pp. 164-168. ISSN 0022-5355 http://resolver.caltech.edu/CaltechAUTHORS:BARjvst80
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We have applied quantum chemical methods to the structure of the clean GaAs (110) surface and the chemisorption of oxygen and aluminum. We find that results for small clusters give geometries for the clean surface in agreement with those observed experimentally. We propose that an intermediate stage of oxidation would exist in which the O atom binds to a surface As. Our studies indicate that the initial site for Al chemisorbed on GaAs (110) has the Al bonded to the surface Ga. Geometries and chemical shifts are reported for both O and Al on GaAs (110). The chemical shifts are in agreement with recent experimental results.
|Additional Information:||© 1980 American Vacuum Society Recived 2 November 1979, aqccepted 20 December 1979 This work was supported in part by a grant from the National Science Foundation (No. DMR 74-04965) and the Director's Discretionary Fund of the Jet Propulsion Laboratory. Arthur Amos Noyes Laboratory of Cheical Physics Contribution No. 6135|
|Subject Keywords:||GALLIUM ARSENIDES; SURFACES; CHEMISORPTION; CRYSTAL STRUCTURE; OXIDATION; CHEMICAL SHIFT; INTERFACES; ELECTRONIC STRUCTURE; VIBRATIONAL STATES; BINDING ENERGY; POTENTIALS; COULOMB FIELD; EXCHANGE INTERACTIONS; HARTREE–FOCK METHOD; ELECTRONEGATIVITY|
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|Deposited On:||10 Apr 2006|
|Last Modified:||26 Dec 2012 08:49|
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