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Rank Modulation for Flash Memories

Jiang, Anxiao (Andrew) and Mateescu, Robert and Schwartz, Moshe and Bruck, Jehoshua (2008) Rank Modulation for Flash Memories. California Institute of Technology , Pasadena, CA. (Unpublished) http://resolver.caltech.edu/CaltechPARADISE:2008.ETR086

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Abstract

We explore a novel data representation scheme for multi-level flash memory cells, in which a set of n cells stores information in the permutation induced by the different charge levels of the individual cells. The only allowed charge-placement mechanism is a "push-to-the-top" operation which takes a single cell of the set and makes it the top-charged cell. The resulting scheme eliminates the need for discrete cell levels, as well as overshoot errors, when programming cells. We present unrestricted Gray codes spanning all possible n-cell states and using only "push-to-the-top" operations, and also construct balanced Gray codes. We also investigate optimal rewriting schemes for translating arbitrary input alphabet into n-cell states which minimize the number of programming operations.


Item Type:Report or Paper (Technical Report)
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URLURL TypeDescription
http://www.paradise.caltech.edu/papers/etr086.pdfPublisherUNSPECIFIED
Group:Parallel and Distributed Systems Group
Record Number:CaltechPARADISE:2008.ETR086
Persistent URL:http://resolver.caltech.edu/CaltechPARADISE:2008.ETR086
Usage Policy:You are granted permission for individual, educational, research and non-commercial reproduction, distribution, display and performance of this work in any format.
ID Code:26116
Collection:CaltechPARADISE
Deposited By: Imported from CaltechPARADISE
Deposited On:05 Feb 2008
Last Modified:26 Dec 2012 13:53

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