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On the capacity of bounded rank modulation for flash memories

Wang, Zhiying and Jiang, Anxiao (Andrew) and Bruck, Jehoshua (2009) On the capacity of bounded rank modulation for flash memories. California Institute of Technology , Pasadena, CA. (Unpublished) http://resolver.caltech.edu/CaltechPARADISE:2008.ETR091

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Abstract

Rank modulation has been recently introduced as a new information representation scheme for flash memories. Given the charge levels of a group of flash cells, sorting is used to induce a permutation, which in turn represents data. Motivated by the lower sorting complexity of smaller cell groups, we consider bounded rank modulation, where a sequence of permutations of given sizes are used to represent data. We study the capacity of bounded rank modulation under the condition that permutations can overlap for higher capacity.


Item Type:Report or Paper (Technical Report)
Group:Parallel and Distributed Systems Group
Record Number:ETR091
Persistent URL:http://resolver.caltech.edu/CaltechPARADISE:2008.ETR091
Usage Policy:You are granted permission for individual, educational, research and non-commercial reproduction, distribution, display and performance of this work in any format.
ID Code:26122
Collection:CaltechPARADISE
Deposited By: Imported from CaltechPARADISE
Deposited On:10 May 2009
Last Modified:26 Dec 2012 13:53

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