Pretorius, R. and Liau, Z. L. and Lau, S. S. and Nicolet, M.-A. (1976) Dissociation mechanism for solid-phase epitaxy of silicon in the Si <100>/Pd2Si/Si (amorphous) system. Applied Physics Letters, 29 (9). pp. 598-600. ISSN 0003-6951. http://resolver.caltech.edu/CaltechAUTHORS:PREapl76
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Solid-phase epitaxial growth (SPEG) of silicon was investigated by a tracer technique using radioactive 31Si formed by neutron activation in a nuclear reactor. After depositing Pd and Si onto activated single-crystal silicon substrates, Pd2Si was formed with about equal amounts of radioactive and nonradioactive Si during heating at 400 °C for 5 min. After an 1-sec annealing stage (450-->500 °C in 1 h) this silicide layer, which moves to the top of the sample during SPEG, is etched off with aqua regia. From the absence of radioactive 31Si in the etch, it is concluded that SPEG takes place by a dissociation mechanism rather than by diffusion.
|Additional Information:||Copyright © 1976 American Institute of Physics Received 26 July 1976 The authors wish to thank Professor V. Guinn and Professor G. Miller for their advice and assistance with the neutron activation of silicon samples in the Triga nuclear reactor at the University of California, Irvine. They would also like to thank Professor D. S. Burnett of the Department of Geochemistry, California Institute of Technology, for the use of his beta-counting equipment, and Professor J. W. Mayer for numerous discussions. One of us, R. Pretorius, thanks the South African Council for Scientific and Industrial Research for financial support.|
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