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Surface recombination measurements on III–V candidate materials for nanostructure light-emitting diodes

Boroditsky, M. and Gontijo, I. and Jackson, M. and Vrijen, R. and Yablonovitch, E. and Krauss, T. and Cheng, Chuan-Cheng and Scherer, A. and Bhat, R. and Krames, M. (2000) Surface recombination measurements on III–V candidate materials for nanostructure light-emitting diodes. Journal of Applied Physics, 87 (7). pp. 3497-3504. ISSN 0021-8979. http://resolver.caltech.edu/CaltechAUTHORS:BORjap00

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Abstract

Surface recombination is an important characteristic of an optoelectronic material. Although surface recombination is a limiting factor for very small devices it has not been studied intensively. We have investigated surface recombination velocity on the exposed surfaces of the AlGaN, InGaAs, and InGaAlP material systems by using absolute photoluminescence quantum efficiency measurements. Two of these three material systems have low enough surface recombination velocity to be usable in nanoscale photonic crystal light-emitting diodes.


Item Type:Article
Additional Information:©2000 American Institute of Physics. (Received 20 September 1999; accepted 18 December 1999)
Subject Keywords:aluminium compounds; indium compounds; gallium arsenide; gallium compounds; III-V semiconductors; surface recombination; photoluminescence; light emitting diodes; nanostructured materials; photonic band gap
Record Number:CaltechAUTHORS:BORjap00
Persistent URL:http://resolver.caltech.edu/CaltechAUTHORS:BORjap00
Alternative URL:http://dx.doi.org/10.1063/1.372372
Usage Policy:No commercial reproduction, distribution, display or performance rights in this work are provided.
ID Code:2702
Collection:CaltechAUTHORS
Deposited By: Archive Administrator
Deposited On:21 Apr 2006
Last Modified:26 Dec 2012 08:50

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