Boudville, W. J. and McGill, T. C. (1985) Ohmic contacts to n-type GaAs. Journal of Vacuum Science and Technology B, 3 (4). pp. 1192-1196. ISSN 1071-1023 http://resolver.caltech.edu/CaltechAUTHORS:BOUjvstb85
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We present a model of the metal–semiconductor junction, for heavily doped GaAs, so that tunneling dominates the current. It is assumed that the imaginary part of the wave vector in the semiconductor is given by the two-band model. Modifications in the barrier potential due to image charge, negative charge near the interface, and the degenerate doping of the semiconductor are included. The role of the L-point minimum in the GaAs in determining the position of the Fermi level in the semiconductor is included. The energy distribution of the conductance as a function of doping and barrier height is given. The contact resistance as a function of doping and barrier height is also presented. The results suggest that previous calculations are substantially in error due to the simple models that were used for the dependence of the imaginary part of the wave vector on energy.
|Additional Information:||© 1985 American Vacuum Society (Received 24 April 1985; accepted 25 April 1985) We would like to acknowledge the support of the Office of Naval Research under Contract No. N00014-82-K-0556. We would also like to thank A. Zur and G. Y. Wu for their advice. One of us (WJB) is the recipient of a Hackett Studentship from the University of Western Australia.|
|Subject Keywords:||GALLIUM ARSENIDES; OHMIC CONTACTS; BARRIER HEIGHT; TUNNEL EFFECT; CRYSTAL DOPING; CONTACT POTENTIAL; MATHEMATICAL MODELS; METAL–SEMICONDUCTOR CONTACTS; ELECTRIC CONDUCTIVITY|
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|Deposited By:||Archive Administrator|
|Deposited On:||21 Apr 2006|
|Last Modified:||26 Dec 2012 08:50|
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