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Reconstruction and oxidation of the GaAs(110) surface

Barton, John J. and Goddard, William A., III and McGill, T. C. (1979) Reconstruction and oxidation of the GaAs(110) surface. Journal of Vacuum Science and Technology, 16 (5). pp. 1178-1185. ISSN 0022-5355. http://resolver.caltech.edu/CaltechAUTHORS:BARjvst79

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Abstract

Using ab initio methods (generalized valence bond with small clusters to represent the surface), we have studied reconstruction of the GaAs (110) surface and the initial steps of oxidation. The relaxation of the surface atoms (26° twist angle) is found to be in good agreement with the results of recent LEED experiments (27°±2° twist angle). The results indicate that the reconstruction is dominated by hybridization effects of orbitals localized at the surface. The calculations of chemisorbed O2 and O support the following picture: (i) Molecular O2 can bond only weakly (physisorb) to the perfect GaAs(110) surface. Chemisorption of the O2 requires a defect site which may then catalyze decomposition of the O2. (ii) There is an intermediate oxidized state at low coverages (before O is inserted in the GaAs bonds) in which O atom is chemisorbed to a surface As (donor–acceptor bond). For this intermediate oxide we calculate chemical shifts of 2.6 eV (deeper) in the 3d levels of the surface As and 0.8 eV (deeper) in the 3d levels of the surface Ga, which are in agreement with recent experiments. We propose several experiments to test various aspects of the initial stages in the oxidation process.


Item Type:Article
Additional Information:© 1979 American Vacuum Society Received 16 April 1979; accepted 24 May 1979 This work (Contribution No. 6013) was supported in part by a grant from the Director's Discretionary Fund of the Jet Propulsion Laboratory and by a grant from the National Science Foundation (DMR74-04965). Useful discussions with Dr. R. S. Bauer and Professors C. W. Wilmsen and W. E. Spicer are gratefully acknowledged.
Subject Keywords:GALLIUM ARSENIDES; SURFACE PROPERTIES; OXIDATION; CHEMISORPTION; CATALYSIS; ELECTRONIC STRUCTURE; ELECTRON DIFFRACTION; OXYGEN; ATOMS; MOLECULES; CHEMICAL SHIFT; VALENCE
Record Number:CaltechAUTHORS:BARjvst79
Persistent URL:http://resolver.caltech.edu/CaltechAUTHORS:BARjvst79
Alternative URL:http://dx.doi.org/10.1116/1.570186
Usage Policy:No commercial reproduction, distribution, display or performance rights in this work are provided.
ID Code:2712
Collection:CaltechAUTHORS
Deposited By: Archive Administrator
Deposited On:21 Apr 2006
Last Modified:26 Dec 2012 08:50

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