Stavola, Michael and Jiang, Fan and Rohatgi, A. and Kim, D. and Holt, J. and Atwater, H. and Kalejs, J. (2003) Hydrogenation of Si from SiN_x: H films: how much hydrogen is really in the Si? In: Proceedings of 3rd World Conference on Photovoltaic Energy Conversion. IEEE , pp. 909-912. ISBN 4-9901816-0-3 http://resolver.caltech.edu/CaltechAUTHORS:20111025-142439492
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A promising method to introduce H into Si solar cells in order to passivate bulk defects is by the post-deposition annealing of an H-rich, SiN_x surface layer. It previously has been difficult to characterize the small concentration of H that is introduced by this method. IR spectroscopy has been used together with marker impurities in the Si to determine the concentration and depth of H introduced into Si from an annealed SiN_x film.
|Item Type:||Book Section|
|Additional Information:||© 2003 IEEE. Issue Date: 18-18 May 2003; Date of Current Version: 28 June 2004. We thank Mark Rosenblum for his assistance with our experiments. Work performed at Lehigh University was supported by NREL Contract No. AAT-1-31606-04 and NSF Grant No. DMR-0108914.|
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|Official Citation:||Stavola, M.; Fan Jiang; Rohatgi, A.; Kim, D.; Holt, J.; Atwater, H.; Kalejs, J.; , "Hydrogenation of Si from SiN/sub x/:H films: how much hydrogen is really in the Si?," Photovoltaic Energy Conversion, 2003. Proceedings of 3rd World Conference on , vol.1, no., pp.909-912 Vol.1, 18-18 May 2003|
|Usage Policy:||No commercial reproduction, distribution, display or performance rights in this work are provided.|
|Deposited By:||Jason Perez|
|Deposited On:||25 Oct 2011 22:21|
|Last Modified:||13 Jul 2012 17:20|
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