Harder, Theodore A. and Yao, Tze-Jung and He, Qing and Shih, Chi-Yuan and Tai, Yu-Chong (2002) Residual stress in thin-film parylene-C. In: 15th IEEE International Conference on Micro Electro Mechanical Systems. Proceedings: IEEE Micro Electro Mechanical Systems Workshop. IEEE , Piscataway, NJ, pp. 435-438. ISBN 0-7803-7185-2 http://resolver.caltech.edu/CaltechAUTHORS:20111101-111718089
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This paper reports the influence of thermal annealing on the residual stress in parylene-c thin-films on silicon. Although recently others have used the diaphragm bulge testing method to measure the residual stress in parylene, this is the first extensive study of residual stress in parylene using the load-deflection method and rotating tip strain gages. This paper supports the hypothesis that stress is relaxed in parylene-c films at elevated temperatures (>100°C) and that thermal stress accounts for 90% of the residual stress in films that have undergone annealing at these elevated temperatures. It was found that this held true up to 180°C which is above the glass transition temperature of the material.
|Item Type:||Book Section|
|Additional Information:||© 2002 IEEE. Meeting Date: 20 Jan 2002-24 Jan 2002; Date of Current Version: 07 August 2002. This work is supported by the NSF Center for Neuromorphic Systems Engineering (CNSE) at Caltech.|
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|Official Citation:||Harder, T.A.; Tze-Jung Yao; Qing He; Chi-Yuan Shih; Yu-Chong Tai; , "Residual stress in thin-film parylene-c," Micro Electro Mechanical Systems, 2002. The Fifteenth IEEE International Conference on , vol., no., pp.435-438, 2002 doi: 10.1109/MEMSYS.2002.984296|
|Usage Policy:||No commercial reproduction, distribution, display or performance rights in this work are provided.|
|Deposited By:||Jason Perez|
|Deposited On:||01 Nov 2011 19:58|
|Last Modified:||23 Aug 2016 10:07|
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