Bin, M. and Gaidis, M. C. and Zmuidzinas, J. and Phillips, T. G. and Leduc, H. G. (1996) THz SIS mixers with normal-metal Al tuning circuits. Superconductor Science and Technology, 9 (4A). A136-A139. ISSN 0953-2048. http://resolver.caltech.edu/CaltechAUTHORS:BINsst96
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Nb-based superconductor - insulator - superconductor (SIS) mixers with Nb tuning circuits have demonstrated good results up to the Nb gap frequency. Above the gap frequency the performance is expected to degrade quickly because RF loss in Nb becomes significant. In this paper we present the results of an effort to extend Nb-based SIS mixers to THz frequencies by employing lower-loss normal-metal Al wiring and tuning structures. The SIS mixer has two Nb/Al-oxide/Nb junctions connected by an Al microstrip inductor. The direct detection response of the device was measured by a Fourier transform spectrometer. A double-side-band receiver noise temperature of 840 K was obtained at 1042 GHz when the device was operated at 2.5 K.
|Additional Information:||© IOP Publishing Limited 1996. Received 18 October 1995, in final form 1 December 1995, Print publication: Issue 4A (April 1996) SPECIAL ISSUE: INTERNATIONAL SUPERCONDUCTIVE ELECTRONICS CONFERENCE 1995 We thank Paul Stockman and Geoff Blake for their assistance with the far-IR laser measurements. This work was supported by NASA grants NAG2-744 and NAGW-107, the NASA/JPL Center for Space Microelectronics Technology, and an NSF Presidential Young Investigator grant to J Zmuidzinas.|
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|Deposited On:||25 Apr 2006|
|Last Modified:||26 Dec 2012 08:50|
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