Cheung, J. T. and Niizawa, G. and Moyle, J. and Ong, N. P. and Paine, B. M. and Vreeland, T., Jr. (1986) HgTe and CdTe epitaxial layers and HgTe–CdTe superlattices grown by laser molecular beam epitaxy. Journal of Vacuum Science and Technology A, 4 (4). pp. 2086-2090. ISSN 0734-2101. http://resolver.caltech.edu/CaltechAUTHORS:CHEjvsta86
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CdTe and HgTe epilayers and HgTe/CdTe superlattices have been grown by laser molecular beam epitaxy (laser MBE) on CdTe substrates. The power density of the laser radiation used to evaporate source materials was found to be a very important growth parameter. The superlattice structures have been characterized by helium ion backscattering spectrometry, x-ray double crystal diffractometry, and low temperature electrical transport measurements. Results indicate good crystallinity and very strong 2D carrier confinement at low temperatures. At 77 K, electron mobilities in excess of 50 000 cm^2/V s have been observed. Quantum Hall effect has been observed for the first time in this system.
|Additional Information:||© 1986 American Vacuum Society (Received 15 December 1985; accepted 10 March 1986) The author thanks the Office of Naval Research (Contract No. N00014-83-C-0736) for supporting this work and Dr. G. Wright and Dr. C. Hathaway for their continuous interest and encouragement.|
|Subject Keywords:||SUPERLATTICES; MERCURY TELLURIDES; FABRICATION; LASER RADIATION; MOLECULAR BEAM EPITAXY; EPITAXIAL LAYERS; ELECTRICAL PROPERTIES; HALL EFFECT; ELECTRON MOBILITY; CADMIUM TELLURIDES; CHARGED–PARTICLE TRANSPORT; CRYSTAL STRUCTURE|
|Usage Policy:||No commercial reproduction, distribution, display or performance rights in this work are provided.|
|Deposited By:||Archive Administrator|
|Deposited On:||26 Apr 2006|
|Last Modified:||26 Dec 2012 08:50|
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