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Strong Hall voltage modulation in hybrid ferromagnet/semiconductor microstructures

Monzon, F. G. and Johnson, Mark and Roukes, M. L. (1997) Strong Hall voltage modulation in hybrid ferromagnet/semiconductor microstructures. Applied Physics Letters, 71 (21). pp. 3087-3089. ISSN 0003-6951. http://resolver.caltech.edu/CaltechAUTHORS:MONapl97

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Abstract

We present a new magnetoelectronic device consisting of a µm-scale semiconductor cross junction and a patterned, electrically isolated, ferromagnetic overlayer with in-plane magnetization. The large local magnetic field emanating from the edge of the thin ferromagnetic film has a strong perpendicular magnetic component, B[perpendicular](r), which induces a Hall resistance, RH, in the microjunction. External application of a weak in-plane magnetic field reverses the magnetization of the ferromagnet and with it B[perpendicular](r), thus modulating RH. Our data demonstrate that this strong "local" Hall effect is operative at both cryogenic and room temperatures, and is promising for device applications such as field sensors or integrated nonvolatile memory cells.


Item Type:Article
Additional Information:©1997 American Institute of Physics. (Received 4 February 1997; accepted 19 September 1997) The authors thank A. N. Cleland for valuable suggestions in the course of both fabrication and measurement. We gratefully acknowledge support from the ONR under Grant Nos. N00014-96-1-0865 and N00014-96-WX21047, and from the Army NDSEG Fellowship Program.
Subject Keywords:Hall effect devices; ferromagnetic materials; magnetic thin film devices; magnetisation; cryogenic electronics
Record Number:CaltechAUTHORS:MONapl97
Persistent URL:http://resolver.caltech.edu/CaltechAUTHORS:MONapl97
Alternative URL:http://dx.doi.org/10.1063/1.120254
Usage Policy:No commercial reproduction, distribution, display or performance rights in this work are provided.
ID Code:2778
Collection:CaltechAUTHORS
Deposited By: Archive Administrator
Deposited On:26 Apr 2006
Last Modified:26 Dec 2012 08:50

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