Atwater, H. A. and Thompson, C. V. and Smith, Henry I. and Geis, M. W. (1983) Orientation filtering by growth-velocity competition in zone-melting recrystallization of silicon on SiO2. Applied Physics Letters, 43 (12). pp. 1126-1128. ISSN 0003-6951. http://resolver.caltech.edu/CaltechAUTHORS:ATWapl83
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We describe a method of controlling the in-plane <100> directions of grains in (100)-textured silicon films produced by zone-melting recrystallization over amorphous SiO2. Grains having in-plane orientation within a narrow range are able to grow through an orientation filter consisting of a pattern of crystallization barriers, while grains having other orientations are occluded. The results of experiments using an orientation filter, and the parameters which optimize filter performance, are reported.
|Additional Information:||Copyright © 1983 American Institute of Physics (Received 9 May 1983; accepted 26 September 1983) This work was supported by the Office of Basic Sciences, U.S. Department of Energy. The Lincoln Laboratory portion of this work was sponsored in part by the Defense Advanced Research Projects Agency. The authors are grateful to R. W. Mountain and C. L> Doherty who provided the substrates and P. Leach, who helped in the etch-pit analysis.|
|Subject Keywords:||recrystallization; zone melting; filters; optimization; silicon; silica; films; grain orientation; amorphous state|
|Usage Policy:||No commercial reproduction, distribution, display or performance rights in this work are provided.|
|Deposited By:||Archive Administrator|
|Deposited On:||28 Apr 2006|
|Last Modified:||26 Dec 2012 08:51|
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