Kimijima, Hideki and Ohgnro, Tatsnya and Evans, Bob and Acker, Bruce and Bloom, John and Mabuchi, Hiroyuki and Kwong, Dim-Lee and Morifuji, Eiji and Yoshitomi, Takashi and Momose, Hisayo Sasaki and Kinugawa, Masaaki and Katsuinata, Yasuhiro and Iwai, Hiroshi (1999) Improvement of 1/f noise by using VHP (vertical high pressure) oxynitride gate insulator for deep-sub micron RF and analog CMOS. In: 1999 Symposium on VLSI Technology: Digest of Technical Papers. IEEE , Piscataway, NJ, pp. 119-120. ISBN 4-930813-93-X http://resolver.caltech.edu/CaltechAUTHORS:20111208-140513820
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Abstract
The 1/f noise in MOSFETs using VHP (vertical high pressure) oxynitride gate insulator was studied. The 1/f noise is degraded by conventional oxynitride gate insulators. It was found that 1/f noise can be improved by using the VHP oxynitride gate insulator.
| Item Type: | Book Section | ||||
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| Additional Information: | © 1999 IEEE. Date of Current Version: 06 August 2002. | ||||
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| Record Number: | CaltechAUTHORS:20111208-140513820 | ||||
| Persistent URL: | http://resolver.caltech.edu/CaltechAUTHORS:20111208-140513820 | ||||
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| Official Citation: | Kimijima, H.; Ohguro, T.; Evans, B.; Acker, B.; Bloom, J.; Mabuchi, H.; Dim-Lee Kwong; Morifuji, E.; Yoshitomi, T.; Momose, H.S.; Kinugawa, M.; Katsumata, Y.; Iwai, H.; , "Improvement of 1/f noise by using VHP (vertical high pressure) oxynitride gate insulator for deep-sub micron RF and analog CMOS," VLSI Technology, 1999. Digest of Technical Papers. 1999 Symposium on , vol., no., pp.119-120, 1999 doi: 10.1109/VLSIT.1999.799372 URL: http://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=799372&isnumber=17273 | ||||
| Usage Policy: | No commercial reproduction, distribution, display or performance rights in this work are provided. | ||||
| ID Code: | 28376 | ||||
| Collection: | CaltechAUTHORS | ||||
| Deposited By: | Tony Diaz | ||||
| Deposited On: | 14 Dec 2011 19:08 | ||||
| Last Modified: | 14 Dec 2011 19:08 |
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