Aydil, Eray S. and Zhou, Zhen and Giapis, Konstantinos P. and Chabal, Yves and Gregus, Jeffrey A. and Gottscho, Richard A. (1993) Real-time, in situ monitoring of surface reactions during plasma passivation of GaAs. Applied Physics Letters, 62 (24). pp. 3156-3158. ISSN 0003-6951. http://resolver.caltech.edu/CaltechAUTHORS:AYDapl93
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Real-time, in situ observations of surface chemistry during the remote plasma passivation of GaAs is reported herein. Using attenuated total reflection Fourier transform infrared spectroscopy, the relative concentrations of -As-O, -As-H, -H2O, and -CH2 bonds are measured as a function of exposure to the effluent from a microwave discharge through NH3, ND3, H2, and D2. The photoluminescence intensity (PL) from the GaAs substrate is monitored simultaneously and used qualitatively to estimate the extent of surface state reduction. It was found that, while the -CHx(x = 2,3) and -As-O concentrations are reduced rapidly, the rates at which the -As-H concentration and the PL intensity increase are relatively slow. The concentration of -H2O on the GaAs surface increases throughout the process as surface arsenic oxides and the silica reactor walls are reduced by atomic hydrogen. These observations suggest that removal of elemental As by reaction with H at the GaAs–oxide interface limits the passivation rate.
|Additional Information:||© 1993 American Institute of Physics (Received 23 November 1992; accepted 22 March 1993)|
|Subject Keywords:||GALLIUM ARSENIDES; SURFACE TREATMENTS; PASSIVATION; PLASMA; SURFACE REACTIONS; CHEMICAL BONDS; REAL TIME SYSTEMS; IN–SITU PROCESSING; MONITORING; PHOTOLUMINESCENCE; FOURIER TRANSFORM SPECTROSCOPY; INFRARED SPECTRA|
|Usage Policy:||No commercial reproduction, distribution, display or performance rights in this work are provided.|
|Deposited By:||Archive Administrator|
|Deposited On:||04 May 2006|
|Last Modified:||26 Dec 2012 08:51|
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